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PreprintCC BY-NC-SA 4.0arXiv

Interfacial Coupling Reshapes Nonlinear Polarization in a Spin-Defect van der Waals Heterostructure

Abstract

Van der Waals heterostructures offer a direct route to couple an optically active layer to a two-dimensional spin sensor, yet their coherent nonlinear response at interfaces remains poorly resolved. Here, we use polarization-resolved second harmonic-generation imaging to resolve four distinct regions of a hexagonal boron nitride (hBN) -based heterostructure, native hBN, neutron-irradiated hBN containing negatively charged boron vacancies (VB-), PbI2 and their complete overlap. The detected intensity scales quadratically with incident power, consistent with a dominant second-order optical process. Polarization scans show that adding PbI2 transforms the distorted VB- SHG anisotropy into a predominantly fourfold response with a sixfold stronger SHG than native hBN alone. This non-additive nonlinear response occurs in the same layer architecture also shown to enhance defect photoluminescence, linking spin-defect sensitization to an interface-modified effective second-order susceptibility.

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BibTeX
@misc{dalifoski2026interfacial,
  title = {{Interfacial Coupling Reshapes Nonlinear Polarization in a Spin-Defect van der Waals Heterostructure}},
  author = {Lena Dalifoski and Eveline Mayner and Poonam Singh},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.15189},
  eprint = {2610.15189},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.15189},
  note = {CC BY-NC-SA 4.0},
}
RIS
TY  - UNPB
TI  - Interfacial Coupling Reshapes Nonlinear Polarization in a Spin-Defect van der Waals Heterostructure
AU  - Lena Dalifoski
AU  - Eveline Mayner
AU  - Poonam Singh
PY  - 2026
DA  - 2026/10/10
PB  - arXiv
DO  - 10.48550/arxiv.2610.15189
UR  - https://arxiv.org/abs/2610.15189
AB  - Van der Waals heterostructures offer a direct route to couple an optically active layer to a two-dimensional spin sensor, yet their coherent nonlinear response at interfaces remains poorly resolved. Here, we use polarization-resolved second harmonic-generation imaging to resolve four distinct regions of a hexagonal boron nitride (hBN) -based heterostructure, native hBN, neutron-irradiated hBN containing negatively charged boron vacancies (VB-), PbI2 and their complete overlap. The detected intensity scales quadratically with incident power, consistent with a dominant second-order optical process. Polarization scans show that adding PbI2 transforms the distorted VB- SHG anisotropy into a predominantly fourfold response with a sixfold stronger SHG than native hBN alone. This non-additive nonlinear response occurs in the same layer architecture also shown to enhance defect photoluminescence, linking spin-defect sensitization to an interface-modified effective second-order susceptibility.
ER  -