Amplification of valley polarization in an hBN-separated MoSe2-WSe2 heterostructure

@misc{mahdikhany2026amplification,
  title = {{Amplification of valley polarization in an hBN-separated MoSe2-WSe2 heterostructure}},
  author = {Fateme Mahdikhany and Jacob Cutshall and Daniel Shanks and Garett Reichenbach and Davoud Adinehloo and Michael R. Koehler and David G. Mandrus and Takashi Taniguchi and Kenji Watanabe and Vasili Perebeinos and Brian J. LeRoy and John R. Schaibley},
  howpublished = {arXiv},
  year = {2026},
  month = nov,
  doi = {10.48550/arxiv.2611.02351},
  eprint = {2611.02351},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2611.02351},
}

TY  - UNPB
TI  - Amplification of valley polarization in an hBN-separated MoSe2-WSe2 heterostructure
AU  - Fateme Mahdikhany
AU  - Jacob Cutshall
AU  - Daniel Shanks
AU  - Garett Reichenbach
AU  - Davoud Adinehloo
AU  - Michael R. Koehler
AU  - David G. Mandrus
AU  - Takashi Taniguchi
AU  - Kenji Watanabe
AU  - Vasili Perebeinos
AU  - Brian J. LeRoy
AU  - John R. Schaibley
PY  - 2026
DA  - 2026/11/02
PB  - arXiv
DO  - 10.48550/arxiv.2611.02351
UR  - https://arxiv.org/abs/2611.02351
AB  - Transition metal dichalcogenide heterostructures host long-lived interlayer excitons in the +K and -K valleys that can encode long-lived valley polarization. We investigated the low-temperature valley polarization dynamics in an MoSe2-bilayer hBN-WSe2 heterostructure. The bilayer hBN spacer results in an interlayer exciton lifetime exceeding 2 μs and an anomalous valley polarization amplification effect. Our theoretical model shows that this amplification results from the long exciton lifetime and exciton-exciton interactions. This work sets the stage for long-lived interlayer excitons to be used in nonlinear valleytronic transistors and amplifiers.
ER  -