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PreprintCC BY 4.0arXiv

On the origin of nonreciprocal charge transport in topological insulator BiSbTeSe2

  • Fengyi Guo
  • Ziqi Wang
  • Xiubing Li
  • Zheng Dai
  • Congcong Li
  • Yufan Ju
  • Shuai Zhang
  • Bin Cheng
  • Zhe Ying
  • Fengqi Song
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Abstract

Nonreciprocal charge transport provides an effective approach for probing direction dependent charge dynamics and spin-momentum-locked electronic states. Here, we report highly gate-tunable nonreciprocal charge transport in dual-gated BiSbTeSe2 topological insulator device. The second-harmonic longitudinal resistance is linear in both current and magnetic field. The nonreciprocal response reaches its maximum near the charge neutrality point, exhibits sign reversals on either side, and is strongly suppressed once the Fermi level enters the bulk states. We suggest that the nonreciprocal response is attributed to the inhomogeneity of spin-momentum locking in the topological surface states. The nonreciprocal signal near the charge neutrality point is about one order of magnitude larger than that without gate modulation and remains robust up to 300 K, highlighting BiSbTeSe2 as a promising platform for room-temperature nonlinear electronics.

Versions

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Cite

BibTeXRIS
BibTeX
@misc{guo2026origin,
  title = {{On the origin of nonreciprocal charge transport in topological insulator BiSbTeSe2}},
  author = {Fengyi Guo and Ziqi Wang and Xiubing Li and Zheng Dai and Congcong Li and Yufan Ju and Shuai Zhang and Bin Cheng and Zhe Ying and Fengqi Song},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.27849},
  eprint = {2610.27849},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.27849},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - On the origin of nonreciprocal charge transport in topological insulator BiSbTeSe2
AU  - Fengyi Guo
AU  - Ziqi Wang
AU  - Xiubing Li
AU  - Zheng Dai
AU  - Congcong Li
AU  - Yufan Ju
AU  - Shuai Zhang
AU  - Bin Cheng
AU  - Zhe Ying
AU  - Fengqi Song
PY  - 2026
DA  - 2026/10/20
PB  - arXiv
DO  - 10.48550/arxiv.2610.27849
UR  - https://arxiv.org/abs/2610.27849
AB  - Nonreciprocal charge transport provides an effective approach for probing direction dependent charge dynamics and spin-momentum-locked electronic states. Here, we report highly gate-tunable nonreciprocal charge transport in dual-gated BiSbTeSe2 topological insulator device. The second-harmonic longitudinal resistance is linear in both current and magnetic field. The nonreciprocal response reaches its maximum near the charge neutrality point, exhibits sign reversals on either side, and is strongly suppressed once the Fermi level enters the bulk states. We suggest that the nonreciprocal response is attributed to the inhomogeneity of spin-momentum locking in the topological surface states. The nonreciprocal signal near the charge neutrality point is about one order of magnitude larger than that without gate modulation and remains robust up to 300 K, highlighting BiSbTeSe2 as a promising platform for room-temperature nonlinear electronics.
ER  -