Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2
Abstract
The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunable NLHE. In this work, we report large second-order and third-order NLHEs in dual-gated BiSbTeSe2 devices. Both the second-order and third-order NLHE are highly gate-tunable. The second-order NLHE exhibits a higher generation efficiency than those reported in previous topological insulator systems, and it can be stably observed up to room temperature. Meanwhile, the generation efficiency of the third-order NLHE is comparable to previously reported values. The scaling analysis indicates that the second-order NLHE is consistent with contributions from skew scattering and a term compatible with either the Berry curvature dipole or side jump, whereas the third-order NLHE is consistent with contributions from the Berry connection polarizability tensor and higher-order skew scattering. Our work establishes a promising experimental platform for the development of NLHE-based devices.
Versions
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BibTeX
@misc{guo2026gatetunable,
title = {{Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2}},
author = {Fengyi Guo and Shuai Zhang and Xiubing Li and Zheng Dai and Congcong Li and Yufan Ju and Ziqi Wang and Cheng Bin and Zhe Ying and Fengqi Song},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.05713},
eprint = {2610.05713},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.05713},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2
AU - Fengyi Guo
AU - Shuai Zhang
AU - Xiubing Li
AU - Zheng Dai
AU - Congcong Li
AU - Yufan Ju
AU - Ziqi Wang
AU - Cheng Bin
AU - Zhe Ying
AU - Fengqi Song
PY - 2026
DA - 2026/10/05
PB - arXiv
DO - 10.48550/arxiv.2610.05713
UR - https://arxiv.org/abs/2610.05713
AB - The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunable NLHE. In this work, we report large second-order and third-order NLHEs in dual-gated BiSbTeSe2 devices. Both the second-order and third-order NLHE are highly gate-tunable. The second-order NLHE exhibits a higher generation efficiency than those reported in previous topological insulator systems, and it can be stably observed up to room temperature. Meanwhile, the generation efficiency of the third-order NLHE is comparable to previously reported values. The scaling analysis indicates that the second-order NLHE is consistent with contributions from skew scattering and a term compatible with either the Berry curvature dipole or side jump, whereas the third-order NLHE is consistent with contributions from the Berry connection polarizability tensor and higher-order skew scattering. Our work establishes a promising experimental platform for the development of NLHE-based devices.
ER -