Berry Curvature Driven Transport in Silicon-Compatible Altermagnetic α-MnTe Thin Films

Abstract

Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of α-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net bulk magnetization, the films exhibit a pronounced hysteretic Hall response, providing transport evidence consistent with finite Berry curvature generated by symmetry breaking in the thin-film geometry. High-resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure, consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures.

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BibTeX RIS

BibTeX

@misc{sarkar2026berry,
  title = {{Berry Curvature Driven Transport in Silicon-Compatible Altermagnetic $α$-MnTe Thin Films}},
  author = {Rajib Sarkar and Subhransu Kumar Negi and Arindom Das and Arijit Mandal and Pankaj Bhardwaj and Sohini Guin and Aryaman Das and Naresh Shyaga and Kartick Biswas and Pavan Nukala and Laxmipriya Nanda and B. R. K. Nanda and Dhavala Suri},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2605.25953},
  eprint = {2605.25953},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2605.25953},
  note = {CC BY-NC-SA 4.0},
}

RIS

TY  - UNPB
TI  - Berry Curvature Driven Transport in Silicon-Compatible Altermagnetic α-MnTe Thin Films
AU  - Rajib Sarkar
AU  - Subhransu Kumar Negi
AU  - Arindom Das
AU  - Arijit Mandal
AU  - Pankaj Bhardwaj
AU  - Sohini Guin
AU  - Aryaman Das
AU  - Naresh Shyaga
AU  - Kartick Biswas
AU  - Pavan Nukala
AU  - Laxmipriya Nanda
AU  - B. R. K. Nanda
AU  - Dhavala Suri
PY  - 2026
DA  - 2026/09/14
PB  - arXiv
DO  - 10.48550/arxiv.2605.25953
UR  - https://arxiv.org/abs/2605.25953
AB  - Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of α-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net bulk magnetization, the films exhibit a pronounced hysteretic Hall response, providing transport evidence consistent with finite Berry curvature generated by symmetry breaking in the thin-film geometry. High-resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure, consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures.
ER  -

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