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PreprintCC BY 4.0arXiv

Non-Markovian Charging of a Micromaser Quantum Battery

  • N. Massa
  • D. Ferraro
  • F. Cavaliere
  • G. Benenti
  • M. Sassetti
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Abstract

We theoretically investigate the role played by non-Markovianity in the charging of a quantum battery. We focus on the case of a Micromaser, where the energy is stored in a resonant cavity mode and memory effects are introduced and controlled by coupling this mode to a memory ancilla, described as a two-level system, that in turn sequentially interacts with a stream of two-level chargers through pairwise exchange interactions leading to a partial swap. Through numerical analysis, we show that non-Markovian memory effects act as a resource that enhances both the charging capacity and the stability of this device with respect to the Markovian counterpart. We conclude our study showing that the proposed scheme can be implemented in state-of-the-art solid-state platforms for circuit quantum electrodynamics.

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Cite

BibTeXRIS
BibTeX
@misc{massa2026nonmarkovian,
  title = {{Non-Markovian Charging of a Micromaser Quantum Battery}},
  author = {N. Massa and D. Ferraro and F. Cavaliere and G. Benenti and M. Sassetti},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.26341},
  eprint = {2609.26341},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.26341},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Non-Markovian Charging of a Micromaser Quantum Battery
AU  - N. Massa
AU  - D. Ferraro
AU  - F. Cavaliere
AU  - G. Benenti
AU  - M. Sassetti
PY  - 2026
DA  - 2026/09/22
PB  - arXiv
DO  - 10.48550/arxiv.2609.26341
UR  - https://arxiv.org/abs/2609.26341
AB  - We theoretically investigate the role played by non-Markovianity in the charging of a quantum battery. We focus on the case of a Micromaser, where the energy is stored in a resonant cavity mode and memory effects are introduced and controlled by coupling this mode to a memory ancilla, described as a two-level system, that in turn sequentially interacts with a stream of two-level chargers through pairwise exchange interactions leading to a partial swap. Through numerical analysis, we show that non-Markovian memory effects act as a resource that enhances both the charging capacity and the stability of this device with respect to the Markovian counterpart. We conclude our study showing that the proposed scheme can be implemented in state-of-the-art solid-state platforms for circuit quantum electrodynamics.
ER  -