Cooling-path-selected self-assembly of telecom InAsP quantum dots
Abstract
Epitaxial quantum dots are leading solid-state sources of quantum light, but reproducible growth on indium phosphide (InP) remains challenging because dot-formation windows are narrow and emission wavelengths are difficult to predict. Here we report a new epitaxial route for InAsP quantum dots on InP(001), in which the cooling path selects the final morphology without intentional deposition of group-III dot material. High-temperature As exposure forms a shallow near-surface InAsP layer through As-P exchange; the cooling path and continued As supply determine whether three-dimensional islands form. Surface-sensitive spectroscopy shows near-surface As enrichment, while cross-sectional STEM/EELS identifies graded, As-rich InAsP islands. The capped emitters span 1.2-1.6 micrometers, with single-photon emission observed up to 100 K. Across 20 wafers, the surface-effective exchange dose D provides a practical calibration for targeting the median emission wavelength. These results establish cooling as an active epitaxial step for telecom InAsP quantum-dot formation and wavelength control.
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BibTeX
@misc{zhang2026coolingpathselected,
title = {{Cooling-path-selected self-assembly of telecom InAsP quantum dots}},
author = {Yiteng Zhang and Doaa Abdelbarey and Markus Etzkorn and Zenghui Jiang and Ankita Choudhary and Andreas Schaate and Tom Fandrich and Xin Cao and Chenxi Ma and Arijit Chakraborty and Eddy Patrick Rugeramigabo and Michael Zopf and Fei Ding},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.01214},
eprint = {2611.01214},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.01214},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Cooling-path-selected self-assembly of telecom InAsP quantum dots
AU - Yiteng Zhang
AU - Doaa Abdelbarey
AU - Markus Etzkorn
AU - Zenghui Jiang
AU - Ankita Choudhary
AU - Andreas Schaate
AU - Tom Fandrich
AU - Xin Cao
AU - Chenxi Ma
AU - Arijit Chakraborty
AU - Eddy Patrick Rugeramigabo
AU - Michael Zopf
AU - Fei Ding
PY - 2026
DA - 2026/11/01
PB - arXiv
DO - 10.48550/arxiv.2611.01214
UR - https://arxiv.org/abs/2611.01214
AB - Epitaxial quantum dots are leading solid-state sources of quantum light, but reproducible growth on indium phosphide (InP) remains challenging because dot-formation windows are narrow and emission wavelengths are difficult to predict. Here we report a new epitaxial route for InAsP quantum dots on InP(001), in which the cooling path selects the final morphology without intentional deposition of group-III dot material. High-temperature As exposure forms a shallow near-surface InAsP layer through As-P exchange; the cooling path and continued As supply determine whether three-dimensional islands form. Surface-sensitive spectroscopy shows near-surface As enrichment, while cross-sectional STEM/EELS identifies graded, As-rich InAsP islands. The capped emitters span 1.2-1.6 micrometers, with single-photon emission observed up to 100 K. Across 20 wafers, the surface-effective exchange dose D provides a practical calibration for targeting the median emission wavelength. These results establish cooling as an active epitaxial step for telecom InAsP quantum-dot formation and wavelength control.
ER -