Photo-induced Wavelength-tuning of Telecom-band Quantum Dot Nanowires Embedded in a Phase Change Material
Abstract
Scalable quantum-photonic technologies require spatially separated emitters to emit at the same wavelength, yet epitaxially grown quantum dots naturally exhibit emitter-to-emitter variations in their emission energies. Here, we demonstrate a contact-free post-growth tuning approach for InAs quantum dots embedded in InP nanowires using the photo-induced transformation of an amorphous Sb2S3 shell. This photoinduced effect leads to a progressive relaxation of the strain imposed on the InP core, enabling controlled spectral tuning of the quantum-dot emission. The effect is observed both at room temperature and under cryogenic conditions for quantum dots emitting in the O-band of the telecommunications spectrum. Strain-induced redshifts of approximately 7 meV at room temperature and 28 meV under cryogenic conditions are observed, respectively. The use of an amorphous chalcogenide shell therefore provides a route to achieve local wavelength tuning at the single quantum-dot-in-a-nanowire level after growth. This approach could enable spectrally matched emitters for scalable quantum-photonic architectures.
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BibTeX
@misc{sotiropoulos2026photoinduced,
title = {{Photo-induced Wavelength-tuning of Telecom-band Quantum Dot Nanowires Embedded in a Phase Change Material}},
author = {Evangelos Sotiropoulos and Philippe Regreny and Matthieu Bugnet and Nicholas P. Blanchard and Sébastien Cueff and José Penuelas and Nicolas Chauvin},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.09870},
eprint = {2609.09870},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.09870},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Photo-induced Wavelength-tuning of Telecom-band Quantum Dot Nanowires Embedded in a Phase Change Material
AU - Evangelos Sotiropoulos
AU - Philippe Regreny
AU - Matthieu Bugnet
AU - Nicholas P. Blanchard
AU - Sébastien Cueff
AU - José Penuelas
AU - Nicolas Chauvin
PY - 2026
DA - 2026/09/09
PB - arXiv
DO - 10.48550/arxiv.2609.09870
UR - https://arxiv.org/abs/2609.09870
AB - Scalable quantum-photonic technologies require spatially separated emitters to emit at the same wavelength, yet epitaxially grown quantum dots naturally exhibit emitter-to-emitter variations in their emission energies. Here, we demonstrate a contact-free post-growth tuning approach for InAs quantum dots embedded in InP nanowires using the photo-induced transformation of an amorphous Sb2S3 shell. This photoinduced effect leads to a progressive relaxation of the strain imposed on the InP core, enabling controlled spectral tuning of the quantum-dot emission. The effect is observed both at room temperature and under cryogenic conditions for quantum dots emitting in the O-band of the telecommunications spectrum. Strain-induced redshifts of approximately 7 meV at room temperature and 28 meV under cryogenic conditions are observed, respectively. The use of an amorphous chalcogenide shell therefore provides a route to achieve local wavelength tuning at the single quantum-dot-in-a-nanowire level after growth. This approach could enable spectrally matched emitters for scalable quantum-photonic architectures.
ER -