Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Abstract

Excitons in two-dimensional semiconductors are directly exposed to the environment and are sensitive to the dielectric properties of their surrounding. Here, we show that the Rydberg series of excited states of excitons in a monolayer WSe2 encapsulated in hexagonal boron nitride (hBN) can be used to probe the pressure-induced modifications of the surrounding dielectric properties. We propose a model based on the pressure induced evolution of the interlayer distances in this van der Waals heterostructure and on the bulk dielectric properties of hBN. This approach allows a direct measurement of the dielectric constant of pressurized hBN and establishes a new methodology for dielectric sensing.

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BibTeX RIS

BibTeX

@article{badola2026probing,
  title = {{Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series}},
  author = {Shalini Badola and Adlen Smiri and Thomas Pelini and Aditi Moghe and Tristan Riccardi and Amit Pawbake and Kenji Watanabe and Takashi Taniguchi and Iann Gerber and Clément Faugeras},
  journal = {Physical Review Letters},
  year = {2026},
  month = may,
  doi = {10.1103/245v-mgsb},
  eprint = {2605.18506},
  archivePrefix = {arXiv},
  url = {https://hal.science/hal-05749060v1},
  note = {CC BY 4.0},
}

RIS

TY  - JOUR
TI  - Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
AU  - Shalini Badola
AU  - Adlen Smiri
AU  - Thomas Pelini
AU  - Aditi Moghe
AU  - Tristan Riccardi
AU  - Amit Pawbake
AU  - Kenji Watanabe
AU  - Takashi Taniguchi
AU  - Iann Gerber
AU  - Clément Faugeras
PY  - 2026
DA  - 2026/05/18
JO  - Physical Review Letters
DO  - 10.1103/245v-mgsb
UR  - https://hal.science/hal-05749060v1
AB  - Excitons in two-dimensional semiconductors are directly exposed to the environment and are sensitive to the dielectric properties of their surrounding. Here, we show that the Rydberg series of excited states of excitons in a monolayer WSe2 encapsulated in hexagonal boron nitride (hBN) can be used to probe the pressure-induced modifications of the surrounding dielectric properties. We propose a model based on the pressure induced evolution of the interlayer distances in this van der Waals heterostructure and on the bulk dielectric properties of hBN. This approach allows a direct measurement of the dielectric constant of pressurized hBN and establishes a new methodology for dielectric sensing.
SN  - 0031-9007
SN  - 1079-7114
ER  -

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