Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Abstract
In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-in defects, which can all limit device performance. An additional and important metric to consider is the strength of the dielectric constant. Hexagonal boron nitride (hBN) is the benchmark gate dielectric for two-dimensional van der Waals heterostructures, owing to its wide bandgap, and atomically flat interface. At the same time, its dielectric constant (2--4) highlights the opportunity to explore alternative higher-permittivity van der Waals dielectrics that provide stronger electrostatic control. Previous work established lanthanum oxybromide (LaOBr), a layered dielectric with a predicted dielectric constant of 12.5, as a potential dielectric for van der Waals heterostructures. Using graphene field-effect devices with LaOBr, we show that the leakage-onset and breakdown fields decrease systematically with thickness. Dual-gate capacitance measurements combined with a dead-layer model reveal a bulk dielectric constant of εbulk = 12.2, in agreement with theory, while interfacial dead-layers cause the effective dielectric constant to vary from 6 to 11 across multiple thicknesses. Benchmarked against established gate dielectrics, LaOBr combines breakdown fields comparable to hBN with dielectric constants 2 to 3 times larger. By establishing the operating regime of devices with various thicknesses, we further confirm the advantage of LaOBr over hBN for high-capacitance gate-dielectric operation. These results validate LaOBr as a promising dielectric for integration into two-dimensional heterostructures, and establish thickness-dependent benchmarking as essential for evaluating emerging layered dielectric materials.
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BibTeX
@misc{lagaud2026establishing,
title = {{Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures}},
author = {Isaac Antoine Lagaud and Justin Boddison-Chouinard and Antoine Labbé and Ayse Melis Aygar and Alex Bogan and Li-Lin Tay and Takashi Taniguchi and Kenji Watanabe and Aljoscha Söll and Zdeněk Sofer and Adina Luican-Mayer and Louis Gaudreau},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.14272},
eprint = {2610.14272},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.14272},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
AU - Isaac Antoine Lagaud
AU - Justin Boddison-Chouinard
AU - Antoine Labbé
AU - Ayse Melis Aygar
AU - Alex Bogan
AU - Li-Lin Tay
AU - Takashi Taniguchi
AU - Kenji Watanabe
AU - Aljoscha Söll
AU - Zdeněk Sofer
AU - Adina Luican-Mayer
AU - Louis Gaudreau
PY - 2026
DA - 2026/10/09
PB - arXiv
DO - 10.48550/arxiv.2610.14272
UR - https://arxiv.org/abs/2610.14272
AB - In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-in defects, which can all limit device performance. An additional and important metric to consider is the strength of the dielectric constant. Hexagonal boron nitride (hBN) is the benchmark gate dielectric for two-dimensional van der Waals heterostructures, owing to its wide bandgap, and atomically flat interface. At the same time, its dielectric constant (2--4) highlights the opportunity to explore alternative higher-permittivity van der Waals dielectrics that provide stronger electrostatic control. Previous work established lanthanum oxybromide (LaOBr), a layered dielectric with a predicted dielectric constant of 12.5, as a potential dielectric for van der Waals heterostructures. Using graphene field-effect devices with LaOBr, we show that the leakage-onset and breakdown fields decrease systematically with thickness. Dual-gate capacitance measurements combined with a dead-layer model reveal a bulk dielectric constant of ε_bulk = 12.2, in agreement with theory, while interfacial dead-layers cause the effective dielectric constant to vary from 6 to 11 across multiple thicknesses. Benchmarked against established gate dielectrics, LaOBr combines breakdown fields comparable to hBN with dielectric constants 2 to 3 times larger. By establishing the operating regime of devices with various thicknesses, we further confirm the advantage of LaOBr over hBN for high-capacitance gate-dielectric operation. These results validate LaOBr as a promising dielectric for integration into two-dimensional heterostructures, and establish thickness-dependent benchmarking as essential for evaluating emerging layered dielectric materials.
ER -