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PreprintCC BY 4.0arXiv

Optical centers in cubic boron nitride and diamond: remarkable similarities

Abstract

We present a comparative study of optical absorption and luminescence from cubic boron nitride (cBN) and diamond grown by the high-pressure high-temperature technique in the same cubic press. We note remarkable similarities in spectral and spatial dependences for these two materials. Using the previous identification of defects in diamond, we tentatively assign the optical center responsible for yellow color in some cBN crystals to substitutional oxygen at the nitrogen site, the RC1 and RC3 centers to a defect comprising substitutional oxygen and a boron vacancy in the neutral and negative charge states, respectively, the GC1 center to a nickel-related defect, the 1.816 eV (683 nm) luminescence peak to a Si-vacancy complex, and the BN1 center to an interstitial-related defect.

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BibTeX
@misc{iakoubovskii2026optical,
  title = {{Optical centers in cubic boron nitride and diamond: remarkable similarities}},
  author = {Konstantin Iakoubovskii and Andrey Katrusha and Weihua Peng and Jianguo Peng},
  howpublished = {arXiv},
  year = {2026},
  month = aug,
  doi = {10.48550/arxiv.2608.03901},
  eprint = {2608.03901},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2608.03901},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Optical centers in cubic boron nitride and diamond: remarkable similarities
AU  - Konstantin Iakoubovskii
AU  - Andrey Katrusha
AU  - Weihua Peng
AU  - Jianguo Peng
PY  - 2026
DA  - 2026/08/04
PB  - arXiv
DO  - 10.48550/arxiv.2608.03901
UR  - https://arxiv.org/abs/2608.03901
AB  - We present a comparative study of optical absorption and luminescence from cubic boron nitride (cBN) and diamond grown by the high-pressure high-temperature technique in the same cubic press. We note remarkable similarities in spectral and spatial dependences for these two materials. Using the previous identification of defects in diamond, we tentatively assign the optical center responsible for yellow color in some cBN crystals to substitutional oxygen at the nitrogen site, the RC1 and RC3 centers to a defect comprising substitutional oxygen and a boron vacancy in the neutral and negative charge states, respectively, the GC1 center to a nickel-related defect, the 1.816 eV (683 nm) luminescence peak to a Si-vacancy complex, and the BN1 center to an interstitial-related defect.
ER  -