Skip to content
DraconiticResearch
Search Sources API
190,335 studies31 sourcesUpdated just now
PreprintCC BY 4.0arXiv

Multi-Branch Transport in a Back-gated WS2 Transistor at Deep-Cryogenic Temperature

  • Megan Powell
  • Vilas Patil
  • Hazel Neill
  • Stephen O'Sullivan
  • Paul K. Hurley
  • Lida Ansari
  • Farzan Gity
  • Alessandro Rossi
Open at sourcePDFDOICite

Abstract

Two-dimensional materials are promising candidates for electronic applications beyond the operating limits of conventional semiconductor technologies. Within this class, transition-metal dichalcogenides offer attractive properties for field-effect transistor operation, with tungsten disulphide (WS2) emerging as a particularly promising material for operation at cryogenic temperatures. Here, we investigate the electrical performance of a back-gated multilayer WS2 transistor at deep cryogenic temperature, down to 20 mK. The device remains strongly gate-tunable throughout the cryogenic regime, with an effective on/off current ratio exceeding 105. Most notably, the low-temperature turn-on characteristics exhibit reproducible shoulder-like features, which we describe using a phenomenological model comprising multiple effective conduction branches operating in parallel.

Related

  1. A Cryogenic Geophone with stable response from Room Temperature to millikelvin
    Stefano Pirro, Marco Ricci, Simone Cioccolini
    arXivPreprintarXiv licenceFull textApplied physics & instrumentationarXiv
  2. Demonstration of a cryogenic, switchable electron source for low-temperature detector calibration
    D. A. Bennett, M. Borghesi, P. Campana +17
    arXivPreprintarXiv licenceFull textApplied physics & instrumentationarXiv
  3. Comparative Optical Spectroscopy of Er3+, Tm3+, and Eu3+ Molecular Complexes at Cryogenic Temperature
    Farhad Rasekh, Sahil, Arsalan Mansourzadeh +4
    arXivPreprintarXiv licenceFull textQuantum physics & quantum informationarXiv
  4. An Open Access Database of Power Diode Characteristics at Cryogenic Temperature
    Yasmine Baazizi, Ana Luiza Haas Bezerra, Alma Lemansour +4
    IET Electric Power ApplicationsPeer-reviewedCC BYCondensed matterHAL
  5. Cryogenic performance of Silicon Photo-Multipliers at LN2 temperature and at 3 K in the RES-NOVA cryostat
    Riccardo Rossini, Massimo Rossella, Massimiliano Clemenza +14
    arXivPreprintCC BY 4.0Full textApplied physics & instrumentationHigh-energy & particle physicsarXiv

Cite

BibTeXRIS
BibTeX
@misc{powell2026multibranch,
  title = {{Multi-Branch Transport in a Back-gated WS$_2$ Transistor at Deep-Cryogenic Temperature}},
  author = {Megan Powell and Vilas Patil and Hazel Neill and Stephen O'Sullivan and Paul K. Hurley and Lida Ansari and Farzan Gity and Alessandro Rossi},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.39878},
  eprint = {2609.39878},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.39878},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Multi-Branch Transport in a Back-gated WS_2 Transistor at Deep-Cryogenic Temperature
AU  - Megan Powell
AU  - Vilas Patil
AU  - Hazel Neill
AU  - Stephen O'Sullivan
AU  - Paul K. Hurley
AU  - Lida Ansari
AU  - Farzan Gity
AU  - Alessandro Rossi
PY  - 2026
DA  - 2026/09/30
PB  - arXiv
DO  - 10.48550/arxiv.2609.39878
UR  - https://arxiv.org/abs/2609.39878
AB  - Two-dimensional materials are promising candidates for electronic applications beyond the operating limits of conventional semiconductor technologies. Within this class, transition-metal dichalcogenides offer attractive properties for field-effect transistor operation, with tungsten disulphide (WS_2) emerging as a particularly promising material for operation at cryogenic temperatures. Here, we investigate the electrical performance of a back-gated multilayer WS_2 transistor at deep cryogenic temperature, down to 20 mK. The device remains strongly gate-tunable throughout the cryogenic regime, with an effective on/off current ratio exceeding 10^5. Most notably, the low-temperature turn-on characteristics exhibit reproducible shoulder-like features, which we describe using a phenomenological model comprising multiple effective conduction branches operating in parallel.
ER  -