Substrate-Dependent Cryogenic and UV Performance of AlGaN/AlN/GaN HEMTs and Photodetectors
- 1National Chung Hsing University , , 145 Xingda Rd. , ,
- 2National Changhua University of Education , , No. 2, Shi-Da Rd. , ,
Abstract
AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) and metal–semiconductor–metal photodetectors (MSM-PDs) were integrated on Al2O3 and 4H-SiC substrates to quantify the impact of substrate selection on cryogenic electrical stability and ultraviolet (UV) optoelectronic performance. The HEMT/SiC structure exhibited a higher peak transconductance (gm) of 1.56 mS/2.34 mS at 300 K/130 K compared to the HEMT/Al2O3 structure (1.27 mS/1.83 mS). At 300 K, the gate-source voltage corresponding to peak gm was −0.3 V for the HEMT/SiC compared to −2.1 V for the HEMT/Al2O3, indicating different strain-induced polarization effects. For integrated sensing, the peak relative spectral response wavelengths were observed at 300 nm (on Al2O3) and 370 nm (on SiC). High-resolution characterization confirms that improved crystal quality and carrier transport in SiC-based heterostructures result from reduced lattice mismatch at the GaN/SiC interface. These findings establish the AlGaN/AlN/GaN-on-SiC platform as a compelling architecture for high-efficiency, switching GaN electronics and integrated cryogenic optoelectronic applications.
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BibTeX
@article{huang2026substratedependent,
title = {{Substrate-Dependent Cryogenic and UV Performance of AlGaN/AlN/GaN HEMTs and Photodetectors}},
author = {Kun-Pin Huang and Maria Kiran Kocherla and Kai-Wei Chien and Shih-Hasan Chiu and Yu-Cheng Kao and Safeer Hussain Rather and Der-Yuh Lin and Hongta Yang and Chia-Feng Lin},
journal = {ACS Omega},
year = {2026},
month = nov,
doi = {10.1021/acsomega.6c02241},
url = {https://pubs.acs.org/acsodf/article/doi/10.1021/acsomega.6c02241/5464856/Substrate-Dependent-Cryogenic-and-UV-Performance},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Substrate-Dependent Cryogenic and UV Performance of AlGaN/AlN/GaN HEMTs and Photodetectors
AU - Kun-Pin Huang
AU - Maria Kiran Kocherla
AU - Kai-Wei Chien
AU - Shih-Hasan Chiu
AU - Yu-Cheng Kao
AU - Safeer Hussain Rather
AU - Der-Yuh Lin
AU - Hongta Yang
AU - Chia-Feng Lin
PY - 2026
DA - 2026/11/05
JO - ACS Omega
DO - 10.1021/acsomega.6c02241
UR - https://pubs.acs.org/acsodf/article/doi/10.1021/acsomega.6c02241/5464856/Substrate-Dependent-Cryogenic-and-UV-Performance
AB - AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) and metal–semiconductor–metal photodetectors (MSM-PDs) were integrated on Al2O3 and 4H-SiC substrates to quantify the impact of substrate selection on cryogenic electrical stability and ultraviolet (UV) optoelectronic performance. The HEMT/SiC structure exhibited a higher peak transconductance (gm) of 1.56 mS/2.34 mS at 300 K/130 K compared to the HEMT/Al2O3 structure (1.27 mS/1.83 mS). At 300 K, the gate-source voltage corresponding to peak gm was −0.3 V for the HEMT/SiC compared to −2.1 V for the HEMT/Al2O3, indicating different strain-induced polarization effects. For integrated sensing, the peak relative spectral response wavelengths were observed at 300 nm (on Al2O3) and 370 nm (on SiC). High-resolution characterization confirms that improved crystal quality and carrier transport in SiC-based heterostructures result from reduced lattice mismatch at the GaN/SiC interface. These findings establish the AlGaN/AlN/GaN-on-SiC platform as a compelling architecture for high-efficiency, switching GaN electronics and integrated cryogenic optoelectronic applications.
SN - 2470-1343
ER -