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Peer-reviewedCC BYNanomaterials (Basel, Switzerland)

Modification of Electrical Transport in a Grating-Electrode GaN/AlGaN Quantum-Well Device by Ti3C2Tx MXene Under 254 nm Illumination

  • Boning Wei1
  • Xi Wei1
  • Haibing Qiu1
  • Cheng Lei1
  • Fengchao Li1
  • Ting Liang1
  • Jiangang Yu1
  • Wenxian Yang2
  • Shulong Lu2
  • Shan Jin2
  1. 1School of Semiconductor and Physics, North University of China, Taiyuan 030051, China; (B.W.); (X.W.);
  2. 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China; (W.Y.);
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Cite

BibTeXRIS
BibTeX
@article{wei2026modification,
  title = {{Modification of Electrical Transport in a Grating-Electrode GaN/AlGaN Quantum-Well Device by Ti3C2Tx MXene Under 254 nm Illumination}},
  author = {Boning Wei and Xi Wei and Haibing Qiu and Cheng Lei and Fengchao Li and Ting Liang and Jiangang Yu and Wenxian Yang and Shulong Lu and Shan Jin},
  journal = {Nanomaterials (Basel, Switzerland)},
  year = {2026},
  month = sep,
  url = {https://europepmc.org/article/PMC/PMC13666622},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Modification of Electrical Transport in a Grating-Electrode GaN/AlGaN Quantum-Well Device by Ti3C2Tx MXene Under 254 nm Illumination
AU  - Boning Wei
AU  - Xi Wei
AU  - Haibing Qiu
AU  - Cheng Lei
AU  - Fengchao Li
AU  - Ting Liang
AU  - Jiangang Yu
AU  - Wenxian Yang
AU  - Shulong Lu
AU  - Shan Jin
PY  - 2026
DA  - 2026/09/23
JO  - Nanomaterials (Basel, Switzerland)
UR  - https://europepmc.org/article/PMC/PMC13666622
SN  - 2079-4991
ER  -