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Peer-reviewedCC BYACS nano

Near-Infrared Plasmonic Nanogap Organic Photodetectors for On-Chip Photonic Integration.

9 affiliations
  1. 1Electronic and Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul02792, Republic of Korea.
  2. 2Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul03722, Republic of Korea.
  3. 3GIST InnoCORE Al-Nano Convergence Institute for Early Detection of Neurodegenerative Diseases, Gwangju Institute of Science and Technology, Gwangju61005, Republic of Korea.
  4. 4School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon16419, Republic of Korea.
  5. 5Center for Quantum Technology, Korea Institute of Science and Technology, Seoul02792, Republic of Korea.
  6. 6KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul02841, Republic of Korea.
  7. 7Division of Nano and Information Technology, KIST School, University of Science and Technology (UST), Seoul02792, Republic of Korea.
  8. 8Department of Chemistry and Chemical Biology, University of New Mexico, Albuquerque, New Mexico87131, United States.
  9. 9Department of Materials Science and Engineering, YU-KIST Institute, Yonsei University, Seoul03722, Republic of Korea.

Abstract

Near-infrared (NIR) photonic integrated circuits (PICs) are emerging as key platforms for on-chip optical communication and sensing, driven by their compatibility with silicon photonics and low-loss operation in telecom wavelength bands. However, conventional photodetectors based on Si, Ge, and III-V semiconductors require high-temperature processing and are difficult to integrate with polymeric or low-index photonic systems. Organic photodetectors (OPDs) offer a promising alternative, enabling efficient NIR light-matter interaction and photodetection while remaining compatible with low-temperature, solution-processed fabrication. Here, we demonstrate a plasmonic nanogap OPD architecture that enables efficient photodetection within an extremely confined nanoscale channel and direct integration with few-micron-width waveguides. Au/Al nanogap electrodes generate strongly localized plasmonic fields and facilitate efficient carrier extraction. With a photomultiplication-type bulk heterojunction, the device achieves high responsivity and quantum efficiency, along with ultralow dark current and a fast temporal response. The waveguide-integrated device detects guided optical signals at multimode interference outputs with consistent modulation response.

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BibTeX
@article{kim2026nearinfrared,
  title = {{Near-Infrared Plasmonic Nanogap Organic Photodetectors for On-Chip Photonic Integration.}},
  author = {Danbi Kim and Hanna Lee and Changsoon Choi and Jung Pyo Hong and Do Kyung Hwang and Wassie M Takele and Terefe G Habteyes and Jeong Ho Cho and In Ho Lee and Jae-Hoon Han and Jung Ah Lim},
  journal = {ACS nano},
  year = {2026},
  month = sep,
  doi = {10.1021/acsnano.6c08504},
  url = {https://europepmc.org/article/MED/42915749},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Near-Infrared Plasmonic Nanogap Organic Photodetectors for On-Chip Photonic Integration.
AU  - Danbi Kim
AU  - Hanna Lee
AU  - Changsoon Choi
AU  - Jung Pyo Hong
AU  - Do Kyung Hwang
AU  - Wassie M Takele
AU  - Terefe G Habteyes
AU  - Jeong Ho Cho
AU  - In Ho Lee
AU  - Jae-Hoon Han
AU  - Jung Ah Lim
PY  - 2026
DA  - 2026/09/01
JO  - ACS nano
DO  - 10.1021/acsnano.6c08504
UR  - https://europepmc.org/article/MED/42915749
AB  - Near-infrared (NIR) photonic integrated circuits (PICs) are emerging as key platforms for on-chip optical communication and sensing, driven by their compatibility with silicon photonics and low-loss operation in telecom wavelength bands. However, conventional photodetectors based on Si, Ge, and III-V semiconductors require high-temperature processing and are difficult to integrate with polymeric or low-index photonic systems. Organic photodetectors (OPDs) offer a promising alternative, enabling efficient NIR light-matter interaction and photodetection while remaining compatible with low-temperature, solution-processed fabrication. Here, we demonstrate a plasmonic nanogap OPD architecture that enables efficient photodetection within an extremely confined nanoscale channel and direct integration with few-micron-width waveguides. Au/Al nanogap electrodes generate strongly localized plasmonic fields and facilitate efficient carrier extraction. With a photomultiplication-type bulk heterojunction, the device achieves high responsivity and quantum efficiency, along with ultralow dark current and a fast temporal response. The waveguide-integrated device detects guided optical signals at multimode interference outputs with consistent modulation response.
SN  - 1936-0851
SN  - 1936-086X
ER  -