Near-Infrared Plasmonic Nanogap Organic Photodetectors for On-Chip Photonic Integration.
9 affiliations
- 1Electronic and Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul02792, Republic of Korea.
- 2Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul03722, Republic of Korea.
- 3GIST InnoCORE Al-Nano Convergence Institute for Early Detection of Neurodegenerative Diseases, Gwangju Institute of Science and Technology, Gwangju61005, Republic of Korea.
- 4School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon16419, Republic of Korea.
- 5Center for Quantum Technology, Korea Institute of Science and Technology, Seoul02792, Republic of Korea.
- 6KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul02841, Republic of Korea.
- 7Division of Nano and Information Technology, KIST School, University of Science and Technology (UST), Seoul02792, Republic of Korea.
- 8Department of Chemistry and Chemical Biology, University of New Mexico, Albuquerque, New Mexico87131, United States.
- 9Department of Materials Science and Engineering, YU-KIST Institute, Yonsei University, Seoul03722, Republic of Korea.
Abstract
Near-infrared (NIR) photonic integrated circuits (PICs) are emerging as key platforms for on-chip optical communication and sensing, driven by their compatibility with silicon photonics and low-loss operation in telecom wavelength bands. However, conventional photodetectors based on Si, Ge, and III-V semiconductors require high-temperature processing and are difficult to integrate with polymeric or low-index photonic systems. Organic photodetectors (OPDs) offer a promising alternative, enabling efficient NIR light-matter interaction and photodetection while remaining compatible with low-temperature, solution-processed fabrication. Here, we demonstrate a plasmonic nanogap OPD architecture that enables efficient photodetection within an extremely confined nanoscale channel and direct integration with few-micron-width waveguides. Au/Al nanogap electrodes generate strongly localized plasmonic fields and facilitate efficient carrier extraction. With a photomultiplication-type bulk heterojunction, the device achieves high responsivity and quantum efficiency, along with ultralow dark current and a fast temporal response. The waveguide-integrated device detects guided optical signals at multimode interference outputs with consistent modulation response.
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BibTeX
@article{kim2026nearinfrared,
title = {{Near-Infrared Plasmonic Nanogap Organic Photodetectors for On-Chip Photonic Integration.}},
author = {Danbi Kim and Hanna Lee and Changsoon Choi and Jung Pyo Hong and Do Kyung Hwang and Wassie M Takele and Terefe G Habteyes and Jeong Ho Cho and In Ho Lee and Jae-Hoon Han and Jung Ah Lim},
journal = {ACS nano},
year = {2026},
month = sep,
doi = {10.1021/acsnano.6c08504},
url = {https://europepmc.org/article/MED/42915749},
note = {CC BY},
}
RIS
TY - JOUR
TI - Near-Infrared Plasmonic Nanogap Organic Photodetectors for On-Chip Photonic Integration.
AU - Danbi Kim
AU - Hanna Lee
AU - Changsoon Choi
AU - Jung Pyo Hong
AU - Do Kyung Hwang
AU - Wassie M Takele
AU - Terefe G Habteyes
AU - Jeong Ho Cho
AU - In Ho Lee
AU - Jae-Hoon Han
AU - Jung Ah Lim
PY - 2026
DA - 2026/09/01
JO - ACS nano
DO - 10.1021/acsnano.6c08504
UR - https://europepmc.org/article/MED/42915749
AB - Near-infrared (NIR) photonic integrated circuits (PICs) are emerging as key platforms for on-chip optical communication and sensing, driven by their compatibility with silicon photonics and low-loss operation in telecom wavelength bands. However, conventional photodetectors based on Si, Ge, and III-V semiconductors require high-temperature processing and are difficult to integrate with polymeric or low-index photonic systems. Organic photodetectors (OPDs) offer a promising alternative, enabling efficient NIR light-matter interaction and photodetection while remaining compatible with low-temperature, solution-processed fabrication. Here, we demonstrate a plasmonic nanogap OPD architecture that enables efficient photodetection within an extremely confined nanoscale channel and direct integration with few-micron-width waveguides. Au/Al nanogap electrodes generate strongly localized plasmonic fields and facilitate efficient carrier extraction. With a photomultiplication-type bulk heterojunction, the device achieves high responsivity and quantum efficiency, along with ultralow dark current and a fast temporal response. The waveguide-integrated device detects guided optical signals at multimode interference outputs with consistent modulation response.
SN - 1936-0851
SN - 1936-086X
ER -