Solution-processed organic infrared photodetectors operating beyond 1.4 μm for sensitive environmental monitoring
- 1Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
- 2University of Chinese Academy of Sciences, Beijing 100049, China.
Abstract
Photon energies in the short-wave infrared (SWIR) beyond 1.4 μm enable access to vibrational-overtone signatures of O–H, C–H, and N–H bonds in pollutants and waste materials, offering an imaging-based nondestructive approach for environmental monitoring. However, current SWIR imaging technologies rely on costly epitaxial semiconductors incompatible with monolithic integration, limiting consumer-grade deployment. Here we report a cost-effective organic SWIR imager with response beyond 1.4 μm, integrating high-detectivity organic photodetectors (OPDs) with amorphous silicon thin-film transistors via solution processing. The developed highly-ordered SWIR organic semiconductors with (halogenated) thiophene-fused quinoid terminals exhibit ultra-narrow optical bandgaps of 0.68–0.94 eV and Urbach energies down to 23 meV. The SWIR OPDs achieve spectral response from 0.3 μm to 1.5–1.7 μm with responsivities up to ∼0.1 A W −1 and specific detectivities of 2.03–4.60 × 10 10 Jones at 1.4 μm. The active-matrix SWIR imagers achieve accurate oil-leak monitoring in simulated seawater (R 2 = 0.993–0.997) and reliable waste-textile classification (silhouette score = 0.824), demonstrating their capabilities in environmental monitoring.
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BibTeX
@article{geng2026solutionprocessed,
title = {{Solution-processed organic infrared photodetectors operating beyond 1.4 μm for sensitive environmental monitoring}},
author = {Yifei Geng and Tengfei Li and Zhenzhen Zhang and Huiqing Hou and Yuze Lin},
journal = {Science Advances},
year = {2026},
month = oct,
doi = {10.1126/sciadv.aeg4558},
url = {https://www.science.org/doi/10.1126/sciadv.aeg4558},
note = {CC BY},
}
RIS
TY - JOUR
TI - Solution-processed organic infrared photodetectors operating beyond 1.4 μm for sensitive environmental monitoring
AU - Yifei Geng
AU - Tengfei Li
AU - Zhenzhen Zhang
AU - Huiqing Hou
AU - Yuze Lin
PY - 2026
DA - 2026/10/09
JO - Science Advances
DO - 10.1126/sciadv.aeg4558
UR - https://www.science.org/doi/10.1126/sciadv.aeg4558
AB - Photon energies in the short-wave infrared (SWIR) beyond 1.4 μm enable access to vibrational-overtone signatures of O–H, C–H, and N–H bonds in pollutants and waste materials, offering an imaging-based nondestructive approach for environmental monitoring. However, current SWIR imaging technologies rely on costly epitaxial semiconductors incompatible with monolithic integration, limiting consumer-grade deployment. Here we report a cost-effective organic SWIR imager with response beyond 1.4 μm, integrating high-detectivity organic photodetectors (OPDs) with amorphous silicon thin-film transistors via solution processing. The developed highly-ordered SWIR organic semiconductors with (halogenated) thiophene-fused quinoid terminals exhibit ultra-narrow optical bandgaps of 0.68–0.94 eV and Urbach energies down to 23 meV. The SWIR OPDs achieve spectral response from 0.3 μm to 1.5–1.7 μm with responsivities up to ∼0.1 A W −1 and specific detectivities of 2.03–4.60 × 10 10 Jones at 1.4 μm. The active-matrix SWIR imagers achieve accurate oil-leak monitoring in simulated seawater (R 2 = 0.993–0.997) and reliable waste-textile classification (silhouette score = 0.824), demonstrating their capabilities in environmental monitoring.
SN - 2375-2548
ER -