Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators
Abstract
Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasi-substrates. In macroscopic Hall bars exceeding the phase coherence length, a multi-probe analysis reveals an insulating bulk and a constant edge resistance over a wide electric-field range. In microscopic devices with edge lengths below the phase coherence lengths, the edge resistance remains robust and quantized across a broad field range, revealing the intrinsic resilience of helical edge channels to electric-field perturbations. Only beyond a threshold value, parasitic edge contributions emerge. These results establish dual gating as a reliable strategy to suppress parasitic conduction while stabilizing helical edge transport, providing a versatile and reproducible platform for tunable topological transport in III-V quantum spin Hall systems.
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BibTeX
@misc{meyer2026electrostatic,
title = {{Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators}},
author = {Manuel Meyer and Tobias Fähndrich and Sebastian Schmid and Justus Walter and Martin Kamp and Adriana Wolf and Sergey Krishtopenko and Guillaume Sigu and Jean-Baptiste Rodriguez and Eric Tournie and Gerald Bastard and Frederic Teppe and Fabian Hartmann and Sven Höfling and Benoit Jouault},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2607.19051},
eprint = {2607.19051},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2607.19051},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators
AU - Manuel Meyer
AU - Tobias Fähndrich
AU - Sebastian Schmid
AU - Justus Walter
AU - Martin Kamp
AU - Adriana Wolf
AU - Sergey Krishtopenko
AU - Guillaume Sigu
AU - Jean-Baptiste Rodriguez
AU - Eric Tournie
AU - Gerald Bastard
AU - Frederic Teppe
AU - Fabian Hartmann
AU - Sven Höfling
AU - Benoit Jouault
PY - 2026
DA - 2026/10/05
PB - arXiv
DO - 10.48550/arxiv.2607.19051
UR - https://arxiv.org/abs/2607.19051
AB - Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasi-substrates. In macroscopic Hall bars exceeding the phase coherence length, a multi-probe analysis reveals an insulating bulk and a constant edge resistance over a wide electric-field range. In microscopic devices with edge lengths below the phase coherence lengths, the edge resistance remains robust and quantized across a broad field range, revealing the intrinsic resilience of helical edge channels to electric-field perturbations. Only beyond a threshold value, parasitic edge contributions emerge. These results establish dual gating as a reliable strategy to suppress parasitic conduction while stabilizing helical edge transport, providing a versatile and reproducible platform for tunable topological transport in III-V quantum spin Hall systems.
ER -