Impact of different laser annealing regimes on the structural, chemical and morphological changes of Cu
7 affiliations
- 1Instituto de Nanociencia y Materiales de Aragón, CSIC-Universidad de Zaragoza, María de Luna 3, Zaragoza, 50018, Spain; Departamento de Ingeniería de Diseño y Fabricación, Universidad de Zaragoza, María de Luna 3, Zaragoza, 50018, Spain; Corresponding author at: Instituto de Nanociencia y Materiales de Aragón, CSIC-Universidad de Zaragoza, María de Luna 3, 50018 Zaragoza, Spain.
- 2University Toulouse, CNRS, Toulouse INP, LGC, Toulouse, France; University Grenoble Alpes, CNRS, Grenoble INP, LMGP, Grenoble, 38000, France
- 3Instituto de Nanociencia y Materiales de Aragón, CSIC-Universidad de Zaragoza, María de Luna 3, Zaragoza, 50018, Spain
- 4University Grenoble Alpes, CNRS, Grenoble INP, LMGP, Grenoble, 38000, France
- 5University Grenoble Alpes, CNRS, Grenoble INP, LMGP, Grenoble, 38000, France; University Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, CROMA, Grenoble, 38000, France
- 6Spanish CRG BM25-SpLine at The European Synchrotron, 71 Av. des Martyrs, Grenoble, 38000, France; Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, Madrid, 28049, Spain
- 7University Grenoble Alpes, CNRS, Grenoble INP, LMGP, Grenoble, 38000, France; Corresponding author at: Laboratoire des Matériaux et du Génie Physique, CNRS-UGA-Grenoble INP, 3 Parvis Louis Néel, 38016 Grenoble, France.
Abstract
This work presents a comprehensive investigation of the structural, chemical, morphological, and electrical modifications induced in Cu 2 O thin films deposited by Spatial Atomic Layer Deposition (SALD) following laser thermal annealing (LTA) in air. The results provide insight into scalable approaches for the precise engineering of oxide semiconductors, with direct relevance to emerging applications in optoelectronics, catalysis, and energy conversion technologies. Two complementary irradiation regimes were explored to decouple thermal and photochemical effects: a near-infrared (n-IR) nanosecond laser (1064 nm, 20 ns) and an ultraviolet (UV) picosecond laser (355 nm, 300 ps). Synchrotron-based XRD, XANES, and EXAFS analyses reveal that n-IR irradiation operates in a thermally dominated regime, inducing oxidation of Cu⁺ to Cu²⁺ and the formation of CuO through extended heat diffusion and grain coarsening. Conversely, UV picosecond irradiation confines excitation to the near-surface region, enabling localized recrystallization and texture reorientation of Cu 2 O without altering its oxidation state. At higher fluences, partial photoreduction to metallic Cu can be promoted. Scanning electron microscopy images display wide heat-affected zones and heterogeneous morphologies in n-IR irradiated samples. In contrast, UV processing achieves precise surface control, from smooth, compact films to distributed 3D nano-hemispheres, through tunable melting and re-solidification. Electrical measurements reveal that low-energy UV treatments reduce film resistivity by a factor of four, whereas n-IR irradiation suppresses macroscopic conduction through the formation of insulating CuO. High-fluence UV irradiation disrupts film continuity and eliminates lateral percolation. Overall, these findings establish laser engineering as a robust, single-step, and scalable approach for the bidirectional tuning of Cu 2 O thin films, enabling oxidation or reduction, and morphological control critical for next-generation optoelectronic, catalytic, and energy-conversion devices.
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BibTeX
@article{frechilla2026impact,
title = {{Impact of different laser annealing regimes on the structural, chemical and morphological changes of Cu}},
author = {A. Frechilla and A. Sekkat and J. Frechilla and F. Toldrá-Reig and Liam Johnston and Hayri Okcu and E. Martinez and L.A. Angurel and J. Rubio-Zuazo and G.F. de La Fuente and D. Muñoz-Rojas},
journal = {Applied Surface Science Advances},
year = {2026},
month = oct,
doi = {10.1016/j.apsadv.2026.101078},
url = {https://doi.org/10.1016/j.apsadv.2026.101078},
note = {CC BY},
}
RIS
TY - JOUR
TI - Impact of different laser annealing regimes on the structural, chemical and morphological changes of Cu
AU - A. Frechilla
AU - A. Sekkat
AU - J. Frechilla
AU - F. Toldrá-Reig
AU - Liam Johnston
AU - Hayri Okcu
AU - E. Martinez
AU - L.A. Angurel
AU - J. Rubio-Zuazo
AU - G.F. de La Fuente
AU - D. Muñoz-Rojas
PY - 2026
DA - 2026/10/30
JO - Applied Surface Science Advances
DO - 10.1016/j.apsadv.2026.101078
UR - https://doi.org/10.1016/j.apsadv.2026.101078
AB - This work presents a comprehensive investigation of the structural, chemical, morphological, and electrical modifications induced in Cu 2 O thin films deposited by Spatial Atomic Layer Deposition (SALD) following laser thermal annealing (LTA) in air. The results provide insight into scalable approaches for the precise engineering of oxide semiconductors, with direct relevance to emerging applications in optoelectronics, catalysis, and energy conversion technologies. Two complementary irradiation regimes were explored to decouple thermal and photochemical effects: a near-infrared (n-IR) nanosecond laser (1064 nm, 20 ns) and an ultraviolet (UV) picosecond laser (355 nm, 300 ps). Synchrotron-based XRD, XANES, and EXAFS analyses reveal that n-IR irradiation operates in a thermally dominated regime, inducing oxidation of Cu⁺ to Cu²⁺ and the formation of CuO through extended heat diffusion and grain coarsening. Conversely, UV picosecond irradiation confines excitation to the near-surface region, enabling localized recrystallization and texture reorientation of Cu 2 O without altering its oxidation state. At higher fluences, partial photoreduction to metallic Cu can be promoted. Scanning electron microscopy images display wide heat-affected zones and heterogeneous morphologies in n-IR irradiated samples. In contrast, UV processing achieves precise surface control, from smooth, compact films to distributed 3D nano-hemispheres, through tunable melting and re-solidification. Electrical measurements reveal that low-energy UV treatments reduce film resistivity by a factor of four, whereas n-IR irradiation suppresses macroscopic conduction through the formation of insulating CuO. High-fluence UV irradiation disrupts film continuity and eliminates lateral percolation. Overall, these findings establish laser engineering as a robust, single-step, and scalable approach for the bidirectional tuning of Cu 2 O thin films, enabling oxidation or reduction, and morphological control critical for next-generation optoelectronic, catalytic, and energy-conversion devices.
SN - 2666-5239
ER -