Ionic Liquids at the Interface With the Transition Metal Dichalcogenide MoS 2 : Effect of the Chemical Structure on Induced Charge Carrier Density
Abstract
Transition metal dichalcogenides (TMDs) are emerging layered materials suited for applications in electronics, optoelectronics, and sensing thanks to their semiconductor nature. More recently, electric‐field tuning of surface carrier density through carrier accumulation or depletion in TMDs‐based field‐effect‐transistor devices has been attracting a great deal of interest as a new method to control superconductivity in this class of materials. Such results were achieved by means of ionic liquids (ILs) acting as a gating medium for MoS 2 crystals. Despite the intensive use of ILs for gating TMDs‐based transistors, the impact of the chemical structure of the ions on the induced charge density, a key parameter for controlling the critical temperature ( T c ) in superconducting MoS 2 crystals, is still lacking. Here we demonstrate that ionic liquid gating of MoS 2 channels using [EMIM][TFSI] or [EMIM][BF 4 ] can lead to different carrier densities. [TFSI]‐based systems exhibit steeper voltage decay (compared to [BF 4 ]‐based systems) meaning the potential drops more rapidly across the electric double layer, indicating stronger local electric fields and more efficient charge accumulation in the MoS 2 channel. Our findings represent the first, yet important, step that paves the way towards controlling charge carrier densities on demand in TMDs by chemical design of the anion and cation pair.
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BibTeX
@article{hamdi2026ionic,
title = {{Ionic Liquids at the Interface With the Transition Metal Dichalcogenide MoS 2 : Effect of the Chemical Structure on Induced Charge Carrier Density}},
author = {Anoir Hamdi and Iréné Amiehe Essomba and Kana Ishisone and Kerstin Falk and Michael Moseler and Ramin Karimi Azari and Tian Lan and Clara Santato and Mauro Boero and Guido Ori and Emanuele Orgiu},
journal = {Small},
year = {2026},
month = sep,
doi = {10.1002/smll.75923},
url = {https://hal.science/hal-05774797v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Ionic Liquids at the Interface With the Transition Metal Dichalcogenide MoS 2 : Effect of the Chemical Structure on Induced Charge Carrier Density
AU - Anoir Hamdi
AU - Iréné Amiehe Essomba
AU - Kana Ishisone
AU - Kerstin Falk
AU - Michael Moseler
AU - Ramin Karimi Azari
AU - Tian Lan
AU - Clara Santato
AU - Mauro Boero
AU - Guido Ori
AU - Emanuele Orgiu
PY - 2026
DA - 2026/09/29
JO - Small
DO - 10.1002/smll.75923
UR - https://hal.science/hal-05774797v1
AB - Transition metal dichalcogenides (TMDs) are emerging layered materials suited for applications in electronics, optoelectronics, and sensing thanks to their semiconductor nature. More recently, electric‐field tuning of surface carrier density through carrier accumulation or depletion in TMDs‐based field‐effect‐transistor devices has been attracting a great deal of interest as a new method to control superconductivity in this class of materials. Such results were achieved by means of ionic liquids (ILs) acting as a gating medium for MoS 2 crystals. Despite the intensive use of ILs for gating TMDs‐based transistors, the impact of the chemical structure of the ions on the induced charge density, a key parameter for controlling the critical temperature ( T c ) in superconducting MoS 2 crystals, is still lacking. Here we demonstrate that ionic liquid gating of MoS 2 channels using [EMIM][TFSI] or [EMIM][BF 4 ] can lead to different carrier densities. [TFSI]‐based systems exhibit steeper voltage decay (compared to [BF 4 ]‐based systems) meaning the potential drops more rapidly across the electric double layer, indicating stronger local electric fields and more efficient charge accumulation in the MoS 2 channel. Our findings represent the first, yet important, step that paves the way towards controlling charge carrier densities on demand in TMDs by chemical design of the anion and cation pair.
SN - 1613-6810
SN - 1613-6829
ER -