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PreprintCC BY 4.0arXiv

Nonlocal Electrostatic Origin of Schottky-Barrier Variability in 2D Contacts

  • Hangbo Zhou
  • Yong-Wei Zhang
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Abstract

Electrical contacts often limit the performance of atomically thin semiconductor devices. The Schottky barrier height (SBH) is conventionally treated as a local interface property, yet reported values for the same metal/2D-semiconductor contact vary by hundreds of meV. Here we show that, in top contacts, the effective SBH exhibits a pronounced nonlocal electrostatic dependence on defects near the contact edge, beyond the conventional local interface framework. A nonlocal electrostatic model, supported by density-functional-theory-based transport calculations for Ti--MoS2 and Au--MoS2, captures the large, metal-dependent variations in SBH as a function of defect position relative to the contact edge. These results provide a unified explanation for the longstanding variability in experimentally extracted SBHs and establish nonlocal electrostatics, mediated by edge-proximal defects, as a key mechanism governing carrier injection in 2D contacts.

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Cite

BibTeXRIS
BibTeX
@misc{zhou2026nonlocal,
  title = {{Nonlocal Electrostatic Origin of Schottky-Barrier Variability in 2D Contacts}},
  author = {Hangbo Zhou and Yong-Wei Zhang},
  howpublished = {arXiv},
  year = {2026},
  month = jul,
  doi = {10.48550/arxiv.2607.08253},
  eprint = {2607.08253},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2607.08253},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Nonlocal Electrostatic Origin of Schottky-Barrier Variability in 2D Contacts
AU  - Hangbo Zhou
AU  - Yong-Wei Zhang
PY  - 2026
DA  - 2026/07/09
PB  - arXiv
DO  - 10.48550/arxiv.2607.08253
UR  - https://arxiv.org/abs/2607.08253
AB  - Electrical contacts often limit the performance of atomically thin semiconductor devices. The Schottky barrier height (SBH) is conventionally treated as a local interface property, yet reported values for the same metal/2D-semiconductor contact vary by hundreds of meV. Here we show that, in top contacts, the effective SBH exhibits a pronounced nonlocal electrostatic dependence on defects near the contact edge, beyond the conventional local interface framework. A nonlocal electrostatic model, supported by density-functional-theory-based transport calculations for Ti--MoS_2 and Au--MoS_2, captures the large, metal-dependent variations in SBH as a function of defect position relative to the contact edge. These results provide a unified explanation for the longstanding variability in experimentally extracted SBHs and establish nonlocal electrostatics, mediated by edge-proximal defects, as a key mechanism governing carrier injection in 2D contacts.
ER  -