Fast On-Chip Thermometry with TiN Kinetic Inductance Resonators in 22 nm Process Technology

Abstract

Understanding the temporal and spatial dependence of temperature is critical in high-performance cryogenic devices. Typical thermometry techniques struggle to simultaneously combine high bandwidth, sensitivity and on-chip integration, limiting their ability to measure fast intra-device thermal fluctuations. Here, we demonstrate a time-resolved thermometry platform based on TiN kinetic inductance resonators integrated in a 22 nm FDSOI chip. By tracking temperature-dependent shifts in the resonant frequency, we achieve sub-millikelvin temperature sensitivity down to temperatures of 100 mK. Time-resolved on-chip pulsed heating experiments as a function of distance reveal an onset delay, consistent with a quasi-ballistic heat propagation velocity of 3.9 ± 0.1 mm μs⁻¹. We also show that elevated temperatures increase net thermal conductance, shortening thermal relaxation times across all spatial separations. This behaviour manifests in two distinct regimes: a substrate-limited regime at 100 mK, where cooling rates vary with heater distance, and a Kapitza boundary-limited regime at 400 mK, where thermal relaxation becomes more spatially uniform. These measurements demonstrate kinetic inductance thermometry's ability to rapidly probe non-equilibrium temperature dynamics in cryogenic devices such as quantum processors.

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BibTeX RIS

BibTeX

@misc{drayne2026fast,
  title = {{Fast On-Chip Thermometry with TiN Kinetic Inductance Resonators in 22 nm Process Technology}},
  author = {Johann Drayne and George Ridgard and Lorenzo Peri and Frederic Schlattner and Fabio Olivieri and Mathieu de Kruijf and Isaac Harris and Grayson Noah and James Kirkman and Alberto Gomez-Saiz and M. Fernando Gonzalez-Zalba and Thomas Swift},
  howpublished = {arXiv},
  year = {2026},
  month = aug,
  doi = {10.48550/arxiv.2608.27057},
  eprint = {2608.27057},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2608.27057},
}

RIS

TY  - UNPB
TI  - Fast On-Chip Thermometry with TiN Kinetic Inductance Resonators in 22 nm Process Technology
AU  - Johann Drayne
AU  - George Ridgard
AU  - Lorenzo Peri
AU  - Frederic Schlattner
AU  - Fabio Olivieri
AU  - Mathieu de Kruijf
AU  - Isaac Harris
AU  - Grayson Noah
AU  - James Kirkman
AU  - Alberto Gomez-Saiz
AU  - M. Fernando Gonzalez-Zalba
AU  - Thomas Swift
PY  - 2026
DA  - 2026/08/28
PB  - arXiv
DO  - 10.48550/arxiv.2608.27057
UR  - https://arxiv.org/abs/2608.27057
AB  - Understanding the temporal and spatial dependence of temperature is critical in high-performance cryogenic devices. Typical thermometry techniques struggle to simultaneously combine high bandwidth, sensitivity and on-chip integration, limiting their ability to measure fast intra-device thermal fluctuations. Here, we demonstrate a time-resolved thermometry platform based on TiN kinetic inductance resonators integrated in a 22 nm FDSOI chip. By tracking temperature-dependent shifts in the resonant frequency, we achieve sub-millikelvin temperature sensitivity down to temperatures of 100 mK. Time-resolved on-chip pulsed heating experiments as a function of distance reveal an onset delay, consistent with a quasi-ballistic heat propagation velocity of 3.9 ± 0.1 mm μs^−1. We also show that elevated temperatures increase net thermal conductance, shortening thermal relaxation times across all spatial separations. This behaviour manifests in two distinct regimes: a substrate-limited regime at 100 mK, where cooling rates vary with heater distance, and a Kapitza boundary-limited regime at 400 mK, where thermal relaxation becomes more spatially uniform. These measurements demonstrate kinetic inductance thermometry's ability to rapidly probe non-equilibrium temperature dynamics in cryogenic devices such as quantum processors.
ER  -

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