Gate tunable circular photogalvanic effect at amorphous-LaAlO3/SrTiO3 interfaces
- 1School of Physics Science and Information Technology (School of Integrated Circuits), Liaocheng University
Abstract
Interface electronic states at perovskite oxide interfaces represent an important class of heterostructures that exhibit a wide range of functional properties. The circular photogalvanic effect (CPGE), which originates from microscopic inversion symmetry breaking and the resulting spin-orbit coupling, is a significant phenomenon observed in this system. In this study, we investigated the CPGE at amorphous-LaAlO₃/ SrTiO₃ (a-LAO/STO) interfaces under 450 nm, 532 nm, and 780 nm illumination. The CPGE photocurrent demonstrates gate-tunable characteristics, showing linear dependence on back-gate voltage (V G ) and exhibiting polarity reversal under negative V G . These effects arise from illumination-driven migration of oxygen vacancies and electrons. Under negative V G , the migration induces reversed asymmetry distribution of oxygen vacancies and electrons, leading to photocurrent direction reversal. The opposite migration of oxygen vacancies and electrons expands the width of photon-absorbing region, producing the observed linear V G dependence.
Related
- Deciphering Aggregation-Induced Tunable Circular Dichroism of AuBP@Ag and AuBP@Au Chiral Core–Shell Plasmonic Nanoparticles
- Atomic-Scale Mapping of an Emergent Interfacial Two-Dimensional Electron Gas at Anatase/LaAlO3
- From Amorphous to Amorphous-Crystalline Mixed-Phase Boron Nitride: Evolution of the Thermal and Elastic Properties
- Amorphous Cu-FeOOH Clusters on Oxygen-Deficient Fe-Doped BiOCl Nanoflowers for Efficient Photo-Fenton Degradation of Levofloxacin
- From β-AlF3 to Amorphous Aluminium Chlorofluoride (ACF) Models: A First-Principles Study
BibTeX
@article{li2026gate,
title = {{Gate tunable circular photogalvanic effect at amorphous-LaAlO3/SrTiO3 interfaces}},
author = {Chengjian Li and Xiaowei Wang and Guoru Li and Jiajun Guo},
journal = {Scientific Reports},
year = {2026},
month = jul,
doi = {10.1038/s41598-026-62605-0},
url = {https://doi.org/10.1038/s41598-026-62605-0},
note = {CC BY},
}
RIS
TY - JOUR
TI - Gate tunable circular photogalvanic effect at amorphous-LaAlO3/SrTiO3 interfaces
AU - Chengjian Li
AU - Xiaowei Wang
AU - Guoru Li
AU - Jiajun Guo
PY - 2026
DA - 2026/07/01
JO - Scientific Reports
DO - 10.1038/s41598-026-62605-0
UR - https://doi.org/10.1038/s41598-026-62605-0
AB - Interface electronic states at perovskite oxide interfaces represent an important class of heterostructures that exhibit a wide range of functional properties. The circular photogalvanic effect (CPGE), which originates from microscopic inversion symmetry breaking and the resulting spin-orbit coupling, is a significant phenomenon observed in this system. In this study, we investigated the CPGE at amorphous-LaAlO₃/ SrTiO₃ (a-LAO/STO) interfaces under 450 nm, 532 nm, and 780 nm illumination. The CPGE photocurrent demonstrates gate-tunable characteristics, showing linear dependence on back-gate voltage (V G ) and exhibiting polarity reversal under negative V G . These effects arise from illumination-driven migration of oxygen vacancies and electrons. Under negative V G , the migration induces reversed asymmetry distribution of oxygen vacancies and electrons, leading to photocurrent direction reversal. The opposite migration of oxygen vacancies and electrons expands the width of photon-absorbing region, producing the observed linear V G dependence.
SN - 2045-2322
ER -