Two-Dimensional Magnetic Materials from Ferromagnetism to Altermagnetism: Fabrication, Symmetry, Evidence, and Device Readiness
Abstract
Atomically thin magnets are governed by composition, thickness, stacking, strain, defects, substrates, ferroic order, and interfaces. This Review organizes two-dimensional (2D) magnetism using net magnetization and momentum-space spin splitting or spin-polarization patterns as primary coordinates, supplemented by sublattice structure and the symmetry relations between opposite-spin sublattices. Ferromagnets generally carry a net moment; ferrimagnets can be fully compensated. Conventional antiferromagnets may retain spin-degenerate bands, while altermagnets permit nonrelativistic alternating spin splitting under dimension-specific symmetry constraints. M1-M4 reporting classes introduced here distinguish layer-resolved atomically thin forms, non-layer-resolved thin flakes or films, bulk benchmarks, and theoretical candidates or design routes; the evidence category and ordering-temperature provenance are reported independently. Current experimental support for altermagnetism comes mainly from M2 thin-film and M3 bulk benchmarks, leaving a fully verified atomically thin M1 altermagnetic phase as an open experimental goal. Most proposed monolayer and few-layer systems therefore fall within M4, and contested cases clarify the measurements needed for phase assignment. Device readiness is compared qualitatively using operating temperature, readout, switching, domain control, stability, scalability, interface sensitivity, and integration difficulty. Reliable phase assignment and device assessment require complementary measurements from the same material form under matched conditions, ideally on the same specimen or in situ.
Versions
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BibTeX
@misc{zhao2026twodimensional,
title = {{Two-Dimensional Magnetic Materials from Ferromagnetism to Altermagnetism: Fabrication, Symmetry, Evidence, and Device Readiness}},
author = {Guojian Zhao and Ziang Meng and Li Liu and Zhiyuan Duan and Jingyu Li and Sixu Jiang and Xiaoyang Tan and Shiheng Bu and Chen Liang and Xiaoning Wang and Peixin Qin and Zhiqi Liu},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.38491},
eprint = {2610.38491},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.38491},
note = {CC0},
}
RIS
TY - UNPB
TI - Two-Dimensional Magnetic Materials from Ferromagnetism to Altermagnetism: Fabrication, Symmetry, Evidence, and Device Readiness
AU - Guojian Zhao
AU - Ziang Meng
AU - Li Liu
AU - Zhiyuan Duan
AU - Jingyu Li
AU - Sixu Jiang
AU - Xiaoyang Tan
AU - Shiheng Bu
AU - Chen Liang
AU - Xiaoning Wang
AU - Peixin Qin
AU - Zhiqi Liu
PY - 2026
DA - 2026/10/28
PB - arXiv
DO - 10.48550/arxiv.2610.38491
UR - https://arxiv.org/abs/2610.38491
AB - Atomically thin magnets are governed by composition, thickness, stacking, strain, defects, substrates, ferroic order, and interfaces. This Review organizes two-dimensional (2D) magnetism using net magnetization and momentum-space spin splitting or spin-polarization patterns as primary coordinates, supplemented by sublattice structure and the symmetry relations between opposite-spin sublattices. Ferromagnets generally carry a net moment; ferrimagnets can be fully compensated. Conventional antiferromagnets may retain spin-degenerate bands, while altermagnets permit nonrelativistic alternating spin splitting under dimension-specific symmetry constraints. M1-M4 reporting classes introduced here distinguish layer-resolved atomically thin forms, non-layer-resolved thin flakes or films, bulk benchmarks, and theoretical candidates or design routes; the evidence category and ordering-temperature provenance are reported independently. Current experimental support for altermagnetism comes mainly from M2 thin-film and M3 bulk benchmarks, leaving a fully verified atomically thin M1 altermagnetic phase as an open experimental goal. Most proposed monolayer and few-layer systems therefore fall within M4, and contested cases clarify the measurements needed for phase assignment. Device readiness is compared qualitatively using operating temperature, readout, switching, domain control, stability, scalability, interface sensitivity, and integration difficulty. Reliable phase assignment and device assessment require complementary measurements from the same material form under matched conditions, ideally on the same specimen or in situ.
ER -