Microstrain-range giant piezoresistivity of silicon oxycarbide thin films under mechanical cyclic loads
Abstract
In the present study, thin-film strain gauge element arrays were prepared based on large-area silicon oxycarbide thin films and lithographic deposition of structured electrodes. The individual strain gauge elements were systematically investigated concerning their piezoresistive behavior at ambient temperature and shown to possess giant piezoresistivity with gauge factors in the range of 3–5 × 103. This has been correlated with the large charge carrier mobility in the silicon oxycarbide thin films (i.e., 186 cm2 V−1 s−1) as well as with a unique phase composition and morphology thereof, consisting of high-conductivity carbon-rich segregations homogeneously dispersed within a silicon oxycarbide-based matrix. The studied strain gauge elements were evaluated in both cyclic tensile and compression load modes and showed excellent reversibility and short response times. The process capability of the strain gauge elements has been statistically assessed and revealed good robustness and replicability which may be further improved. The present work provides a robust and highly reproducible manufacturing process for an ultrasensitive strain gauge prototype and thus points towards a great potential concerning the use of silicon oxycarbides in MEMS-related applications.
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BibTeX
@article{ricohermoso2026microstrainrange,
title = {{Microstrain-range giant piezoresistivity of silicon oxycarbide thin films under mechanical cyclic loads}},
author = {Emmanuel Ricohermoso and Florian Klug and Helmut Schlaak and Ralf Riedel and Emanuel Ionescu},
journal = {Materials \& Design},
year = {2026},
month = oct,
doi = {10.1016/j.matdes.2021.110323},
url = {https://hal.science/hal-05789886v1},
note = {CC BY},
}
RIS
TY - JOUR
TI - Microstrain-range giant piezoresistivity of silicon oxycarbide thin films under mechanical cyclic loads
AU - Emmanuel Ricohermoso
AU - Florian Klug
AU - Helmut Schlaak
AU - Ralf Riedel
AU - Emanuel Ionescu
PY - 2026
DA - 2026/10/09
JO - Materials & Design
DO - 10.1016/j.matdes.2021.110323
UR - https://hal.science/hal-05789886v1
AB - In the present study, thin-film strain gauge element arrays were prepared based on large-area silicon oxycarbide thin films and lithographic deposition of structured electrodes. The individual strain gauge elements were systematically investigated concerning their piezoresistive behavior at ambient temperature and shown to possess giant piezoresistivity with gauge factors in the range of 3–5 × 103. This has been correlated with the large charge carrier mobility in the silicon oxycarbide thin films (i.e., 186 cm2 V−1 s−1) as well as with a unique phase composition and morphology thereof, consisting of high-conductivity carbon-rich segregations homogeneously dispersed within a silicon oxycarbide-based matrix. The studied strain gauge elements were evaluated in both cyclic tensile and compression load modes and showed excellent reversibility and short response times. The process capability of the strain gauge elements has been statistically assessed and revealed good robustness and replicability which may be further improved. The present work provides a robust and highly reproducible manufacturing process for an ultrasensitive strain gauge prototype and thus points towards a great potential concerning the use of silicon oxycarbides in MEMS-related applications.
SN - 0261-3069
SN - 0264-1275
ER -