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Peer-reviewedCC BYInternational Journal of Applied Ceramic Technology

Electrically conductive silicon oxycarbide thin films prepared from preceramic polymers

Abstract

This work focuses on silicon oxycarbide thin film preparation and characterization. The Taguchi method of experimental design was used to optimize the process of film deposition. The prepared ceramic thin films with a thickness of c. 500 nm were characterized concerning their morphology, composition, and electrical properties. The molecular structure of the preceramic polymers used for the preparation of the ceramic thin films as well as the thermomechanical properties of the resulting SiOC significantly influenced the quality of the ceramic films. Thus, an increase in the content of carbon was found beneficial for the preparation of crack‐free thin films. The obtained ceramic films exhibited increased electrical conductivity as compared to monolithic SiOC of similar chemical composition. This was shown to correlate with the unique hierarchical microstructure of the SiOC films, which contain large oxygen‐depleted particles, mainly consisting of highly graphitized carbon and SiC, homogeneously dispersed in an oxygen‐containing amorphous matrix. The matrix was shown to also contain free carbon and to contribute to charge carrier transport between the highly conductive large particles. The ceramic thin films possess electrical conductivities in the range from 5.4 to 8.8 S/cm and may be suitable for implementation in miniaturized piezoresistive strain gauges.

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BibTeX
@article{ricohermoso2026electrically,
  title = {{Electrically conductive silicon oxycarbide thin films prepared from preceramic polymers}},
  author = {Emmanuel Iii Ricohermoso and Florian Klug and Helmut Schlaak and Ralf Riedel and Emanuel Ionescu},
  journal = {International Journal of Applied Ceramic Technology},
  year = {2026},
  month = oct,
  doi = {10.1111/ijac.13800},
  url = {https://hal.science/hal-05789784v1},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Electrically conductive silicon oxycarbide thin films prepared from preceramic polymers
AU  - Emmanuel Iii Ricohermoso
AU  - Florian Klug
AU  - Helmut Schlaak
AU  - Ralf Riedel
AU  - Emanuel Ionescu
PY  - 2026
DA  - 2026/10/09
JO  - International Journal of Applied Ceramic Technology
DO  - 10.1111/ijac.13800
UR  - https://hal.science/hal-05789784v1
AB  - This work focuses on silicon oxycarbide thin film preparation and characterization. The Taguchi method of experimental design was used to optimize the process of film deposition. The prepared ceramic thin films with a thickness of c. 500 nm were characterized concerning their morphology, composition, and electrical properties. The molecular structure of the preceramic polymers used for the preparation of the ceramic thin films as well as the thermomechanical properties of the resulting SiOC significantly influenced the quality of the ceramic films. Thus, an increase in the content of carbon was found beneficial for the preparation of crack‐free thin films. The obtained ceramic films exhibited increased electrical conductivity as compared to monolithic SiOC of similar chemical composition. This was shown to correlate with the unique hierarchical microstructure of the SiOC films, which contain large oxygen‐depleted particles, mainly consisting of highly graphitized carbon and SiC, homogeneously dispersed in an oxygen‐containing amorphous matrix. The matrix was shown to also contain free carbon and to contribute to charge carrier transport between the highly conductive large particles. The ceramic thin films possess electrical conductivities in the range from 5.4 to 8.8 S/cm and may be suitable for implementation in miniaturized piezoresistive strain gauges.
SN  - 1546-542X
SN  - 1744-7402
ER  -