Self-heating effect analysis of a dual cavity AlGaN/GaN MOS-HEMT biosensor with AlN/diamond substrate
Abstract
In this paper, we have designed and analysed the dual cavity AlGaN/GaN Metal oxide semiconductor high electron mobility transistor (MOS-HEMT) heterojunction biosensor for biomolecule detection. The proposed biosensor uses triple-metal work functions (M ₁ , M ₂ and M ₃ ) to improve electric field distribution and electrostatic control. The proposed biosensor is evaluated using MCF-10 A (K = 4.5), Keratin(K = 8), Gelatin (K = 12), Hs578T (K = 22), MCF-7 (K = 27.5) and T47D (K = 32) biomolecules using Atlas Silvaco TCAD. The temperature dependent behaviour is examined at different temperatures (250 K, 300 K, 350 K and 400 K) to evaluate its electrical stability and sensing performance. In addition, Self-Heating Effect (SHE) is analysed using Sapphire and Diamonds substrate configurations. Self-heating increases the lattice temperature, leading to enhanced carrier scattering and reduced 2DEG mobility that can affect the electrical and sensing performance. A Diamond substrate AlN/Diamond substrate is used to improve heat dissipation and supress self-heating. The proposed device analyses the lattice temperature, DIBL, drain-current sensitivity and subthreshold swing (SS) sensitivity for different biomolecule effective dielectric constant. The Diamond substrate reduces the lattice temperature from 422 K to 324 K and increases the drain current sensitivity from 5.392 × 10 ¹ to 9.99 × 10 ¹ at K = 32. These results demonstrated that the proposed AlN/Diamond substrate device provides improved thermal management and sensing performance, making it suitable for biomedical applications.
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BibTeX
@article{prasanna2026selfheating,
title = {{Self-heating effect analysis of a dual cavity AlGaN/GaN MOS-HEMT biosensor with AlN/diamond substrate}},
author = {Rudra Lakshmi Prasanna and T. Srinivasa Ravi Kiran and Pidaparthy Vijaya and Gandikota Naga Chandrika and V Vijayasri Bolisetty and V. B. Sreenivasulu and Girija Sravani Kondavitee and Srinivasa Rao Karumuri},
journal = {Scientific Reports},
year = {2026},
month = oct,
doi = {10.1038/s41598-026-75787-4},
url = {https://www.nature.com/articles/s41598-026-75787-4},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Self-heating effect analysis of a dual cavity AlGaN/GaN MOS-HEMT biosensor with AlN/diamond substrate
AU - Rudra Lakshmi Prasanna
AU - T. Srinivasa Ravi Kiran
AU - Pidaparthy Vijaya
AU - Gandikota Naga Chandrika
AU - V Vijayasri Bolisetty
AU - V. B. Sreenivasulu
AU - Girija Sravani Kondavitee
AU - Srinivasa Rao Karumuri
PY - 2026
DA - 2026/10/23
JO - Scientific Reports
DO - 10.1038/s41598-026-75787-4
UR - https://www.nature.com/articles/s41598-026-75787-4
AB - In this paper, we have designed and analysed the dual cavity AlGaN/GaN Metal oxide semiconductor high electron mobility transistor (MOS-HEMT) heterojunction biosensor for biomolecule detection. The proposed biosensor uses triple-metal work functions (M ₁ , M ₂ and M ₃ ) to improve electric field distribution and electrostatic control. The proposed biosensor is evaluated using MCF-10 A (K = 4.5), Keratin(K = 8), Gelatin (K = 12), Hs578T (K = 22), MCF-7 (K = 27.5) and T47D (K = 32) biomolecules using Atlas Silvaco TCAD. The temperature dependent behaviour is examined at different temperatures (250 K, 300 K, 350 K and 400 K) to evaluate its electrical stability and sensing performance. In addition, Self-Heating Effect (SHE) is analysed using Sapphire and Diamonds substrate configurations. Self-heating increases the lattice temperature, leading to enhanced carrier scattering and reduced 2DEG mobility that can affect the electrical and sensing performance. A Diamond substrate AlN/Diamond substrate is used to improve heat dissipation and supress self-heating. The proposed device analyses the lattice temperature, DIBL, drain-current sensitivity and subthreshold swing (SS) sensitivity for different biomolecule effective dielectric constant. The Diamond substrate reduces the lattice temperature from 422 K to 324 K and increases the drain current sensitivity from 5.392 × 10 ¹ to 9.99 × 10 ¹ at K = 32. These results demonstrated that the proposed AlN/Diamond substrate device provides improved thermal management and sensing performance, making it suitable for biomedical applications.
SN - 2045-2322
ER -