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Peer-reviewedCC BY 4.0Solar Energy Materials and Solar Cells

Imaging defect passivation in grain interiors and grain boundaries of RbF(S)-treated Cu(In,Ga)Se2 solar cells by cathodoluminescence

Abstract

RbF post-deposition treatments provide an effective way to increase the performances of Cu(In,Ga)Se (CIGSe) solar cells, but the role of heavy alkali elements at the microscopic scale is still unclear. Here, we investigate the impact of an RbF post-deposition treatment under S atmosphere. An increase of the conversion efficiency from 12.4% to 16.3% is enabled by a better collection of charge carriers and a 100 mV increase in Voc. Using high-resolution hyperspectral cathodoluminescence mapping, we show that the RbF(S) treatment passivates low-energy defects attributed to copper vacancies, effectively resulting in an efficient reduction of non-radiative recombination at grain boundaries and in grain interiors.

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BibTeX
@article{bidaud2026imaging,
  title = {{Imaging defect passivation in grain interiors and grain boundaries of RbF(S)-treated Cu(In,Ga)Se2 solar cells by cathodoluminescence}},
  author = {Thomas Bidaud and Polyxeni Tsoulka and Nicolas Barreau and Stéphane Collin},
  journal = {Solar Energy Materials and Solar Cells},
  year = {2026},
  month = aug,
  doi = {10.1016/j.solmat.2026.114390},
  url = {https://hal.science/hal-05685956v1},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Imaging defect passivation in grain interiors and grain boundaries of RbF(S)-treated Cu(In,Ga)Se2 solar cells by cathodoluminescence
AU  - Thomas Bidaud
AU  - Polyxeni Tsoulka
AU  - Nicolas Barreau
AU  - Stéphane Collin
PY  - 2026
DA  - 2026/08/15
JO  - Solar Energy Materials and Solar Cells
DO  - 10.1016/j.solmat.2026.114390
UR  - https://hal.science/hal-05685956v1
AB  - RbF post-deposition treatments provide an effective way to increase the performances of Cu(In,Ga)Se (CIGSe) solar cells, but the role of heavy alkali elements at the microscopic scale is still unclear. Here, we investigate the impact of an RbF post-deposition treatment under S atmosphere. An increase of the conversion efficiency from 12.4% to 16.3% is enabled by a better collection of charge carriers and a 100 mV increase in Voc. Using high-resolution hyperspectral cathodoluminescence mapping, we show that the RbF(S) treatment passivates low-energy defects attributed to copper vacancies, effectively resulting in an efficient reduction of non-radiative recombination at grain boundaries and in grain interiors.
SN  - 0927-0248
SN  - 1879-3398
ER  -