Magnetoelectric Multiferroics for the Next-Generation Ultralow-Power Electronics.
- 1Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW, Australia.
Abstract
Magnetoelectric multiferroics enable voltage control of magnetic states for low-energy, non-volatile memory and logic. Their practical value, however, depends on the complete device pathway, not coupling strength alone. This Review evaluates materials, switching mechanisms, and devices against these requirements, distinguishing measured performance from projected targets. We compare three magnetoelectric random-access memory (MeRAM) routes with ferroelectric RAM and spin-transfer torque magnetic RAM, and assess magnetoelectric spin-orbit (MESO) logic alongside complementary metal-oxide-semiconductor (CMOS) technology and current-driven spintronics. MeRAM combines electric-field writing, magnetic storage, and nondestructive readout, with prospects for low write energy and closer memory-logic integration. However, no integrated device has yet combined these benefits with competitive speed, retention, endurance, read margin, and density. For magnetoelectric logic, projected low-voltage, non-volatile operation has yet to be matched by experimental demonstrations of the full conversion path, gain and fan-out. Results from BiFeO₃, room-temperature hexaferrites and other platforms identify deterministic switching, interface quality and thin-film integration as central to closing the gap between projections and experiments. Magnetoelectric devices are therefore more likely to complement CMOS than replace it, particularly in logic-in-memory, compute-near-memory and normally-off systems, where non-volatility and reduced data movement could support next-generation ultralow-power electronics.
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BibTeX
@article{liu2026magnetoelectric,
title = {{Magnetoelectric Multiferroics for the Next-Generation Ultralow-Power Electronics.}},
author = {Yang Liu and Yunlong Sun and Hao Luo and Duoduo Zhao and Yuhan Zeng and Xuzihan Zhang and Zhewei Liu and Hao Peng and Zhijing Zhang and Jack Yang and Ji Zhang and Danyang Wang and Junjie Shi and Sean Li},
journal = {Advanced science (Weinheim, Baden-Wurttemberg, Germany)},
year = {2026},
month = oct,
doi = {10.1002/advs.78344},
url = {https://europepmc.org/article/MED/42893463},
note = {CC BY},
}
RIS
TY - JOUR
TI - Magnetoelectric Multiferroics for the Next-Generation Ultralow-Power Electronics.
AU - Yang Liu
AU - Yunlong Sun
AU - Hao Luo
AU - Duoduo Zhao
AU - Yuhan Zeng
AU - Xuzihan Zhang
AU - Zhewei Liu
AU - Hao Peng
AU - Zhijing Zhang
AU - Jack Yang
AU - Ji Zhang
AU - Danyang Wang
AU - Junjie Shi
AU - Sean Li
PY - 2026
DA - 2026/10/18
JO - Advanced science (Weinheim, Baden-Wurttemberg, Germany)
DO - 10.1002/advs.78344
UR - https://europepmc.org/article/MED/42893463
AB - Magnetoelectric multiferroics enable voltage control of magnetic states for low-energy, non-volatile memory and logic. Their practical value, however, depends on the complete device pathway, not coupling strength alone. This Review evaluates materials, switching mechanisms, and devices against these requirements, distinguishing measured performance from projected targets. We compare three magnetoelectric random-access memory (MeRAM) routes with ferroelectric RAM and spin-transfer torque magnetic RAM, and assess magnetoelectric spin-orbit (MESO) logic alongside complementary metal-oxide-semiconductor (CMOS) technology and current-driven spintronics. MeRAM combines electric-field writing, magnetic storage, and nondestructive readout, with prospects for low write energy and closer memory-logic integration. However, no integrated device has yet combined these benefits with competitive speed, retention, endurance, read margin, and density. For magnetoelectric logic, projected low-voltage, non-volatile operation has yet to be matched by experimental demonstrations of the full conversion path, gain and fan-out. Results from BiFeO₃, room-temperature hexaferrites and other platforms identify deterministic switching, interface quality and thin-film integration as central to closing the gap between projections and experiments. Magnetoelectric devices are therefore more likely to complement CMOS than replace it, particularly in logic-in-memory, compute-near-memory and normally-off systems, where non-volatility and reduced data movement could support next-generation ultralow-power electronics.
SN - 2198-3844
ER -