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Peer-reviewedCC BYACS nano

Polarization-Gradient Engineering of InGaN Nanorods for Hybrid Mechanical-Optical Energy Harvesting.

  • Sheng-Shong Wong1,2
  • Zhen-You Lin1
  • Ya-Chi Chiu1
  • Ming-Hao Lee3,4
  • Ming-Wen Chu3,4
  • Chia-Hao Chen2
  • Chung-Lin Wu1,2,5
5 affiliations
  1. 1Department of Physics, National Cheng Kung University, Tainan70101, Taiwan.
  2. 2National Synchrotron Radiation Research Center (NSRRC) , Hsinchu30076, Taiwan.
  3. 3The Key Consortium of Electron Microscopy, National Taiwan University, Taipei10617, Taiwan.
  4. 4Center for Condensed Matter Sciences and Center of Atomic Initiative for New Materials, National Taiwan University, Taipei10617, Taiwan.
  5. 5Center for Quantum Frontiers of Research and Technology (QFort), National Cheng Kung University, Tainan70101, Taiwan.
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Abstract

Integrating mechanical and optical energy harvesting within a single piezoelectric semiconductor platform remains challenging because photoexcited carriers readily screen the piezoelectric potential and suppress nanogenerator output. Here, we realize highly crystalline, polarity-defined N-polar InGaN/GaN nanorods with opposite axial In gradients and correspondingly opposite built-in electrostatic profiles. Depth-sensitive, angle-resolved hard X-ray photoelectron spectroscopy (AR-HAXPES) reveals opposite equilibrium band-bending profiles─surface carrier accumulation in In-increasing nanorods but depletion in In-decreasing ones─showing that polarization grading redistributes as-grown mobile carriers and that only the In-increasing configuration establishes the internal electrostatics needed to suppress carrier screening and preserve the piezoelectric potential during nanogenerator operation. In vertically integrated nanogenerators (VINGs), this asymmetry produces a much larger output from the In-increasing device than from the In-decreasing one, together with more favorable transient behavior and energy-storage performance, and is further amplified under illumination, which enhances the output of the In-increasing device while suppressing that of the In-decreasing one, consistent with opposite photoscreening dynamics set by the grading-defined built-in fields. These results demonstrate hybrid mechanical-optical energy harvesting in direct-band gap piezoelectric semiconductors such as III-nitrides, where light and strain act cooperatively rather than competitively.

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Cite

BibTeXRIS
BibTeX
@article{wong2026polarizationgradient,
  title = {{Polarization-Gradient Engineering of InGaN Nanorods for Hybrid Mechanical-Optical Energy Harvesting.}},
  author = {Sheng-Shong Wong and Zhen-You Lin and Ya-Chi Chiu and Ming-Hao Lee and Ming-Wen Chu and Chia-Hao Chen and Chung-Lin Wu},
  journal = {ACS nano},
  year = {2026},
  month = sep,
  doi = {10.1021/acsnano.6c09038},
  url = {https://europepmc.org/article/MED/42915036},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Polarization-Gradient Engineering of InGaN Nanorods for Hybrid Mechanical-Optical Energy Harvesting.
AU  - Sheng-Shong Wong
AU  - Zhen-You Lin
AU  - Ya-Chi Chiu
AU  - Ming-Hao Lee
AU  - Ming-Wen Chu
AU  - Chia-Hao Chen
AU  - Chung-Lin Wu
PY  - 2026
DA  - 2026/09/01
JO  - ACS nano
DO  - 10.1021/acsnano.6c09038
UR  - https://europepmc.org/article/MED/42915036
AB  - Integrating mechanical and optical energy harvesting within a single piezoelectric semiconductor platform remains challenging because photoexcited carriers readily screen the piezoelectric potential and suppress nanogenerator output. Here, we realize highly crystalline, polarity-defined N-polar InGaN/GaN nanorods with opposite axial In gradients and correspondingly opposite built-in electrostatic profiles. Depth-sensitive, angle-resolved hard X-ray photoelectron spectroscopy (AR-HAXPES) reveals opposite equilibrium band-bending profiles─surface carrier accumulation in In-increasing nanorods but depletion in In-decreasing ones─showing that polarization grading redistributes as-grown mobile carriers and that only the In-increasing configuration establishes the internal electrostatics needed to suppress carrier screening and preserve the piezoelectric potential during nanogenerator operation. In vertically integrated nanogenerators (VINGs), this asymmetry produces a much larger output from the In-increasing device than from the In-decreasing one, together with more favorable transient behavior and energy-storage performance, and is further amplified under illumination, which enhances the output of the In-increasing device while suppressing that of the In-decreasing one, consistent with opposite photoscreening dynamics set by the grading-defined built-in fields. These results demonstrate hybrid mechanical-optical energy harvesting in direct-band gap piezoelectric semiconductors such as III-nitrides, where light and strain act cooperatively rather than competitively.
SN  - 1936-0851
SN  - 1936-086X
ER  -