Design and synthesis of laser inscribed flexible Bragg gratings containing silicon oxynitride-doped silicon thin film for authentication applications with the insights from X-Ray Absorption Spectroscopy and Quantum Mechanical Calculations
Abstract
Silicon-on-insulator is mostly the main driving material system for the field of silicon photonics, including PICs, due to high index contrast and compatibility with current semiconductor manufacturing processes [1]. A recent example is silicon oxynitride-doped silicon [2] discovered recently by our group, offering to set a new position for the fields of silicon photonics with a precise control of refractive index from 2.1 to 2.5 together with the photosensitivity property at different wavelengths. In this study, we demonstrate that the synthesis of silicon oxynitride-doped silicon can be performed on a flexible substrate for the fabrication of Bragg gratings (BG) at low temperatures below 100 degrees Celsius that are emerging for advanced applications. Their use in preserving ultra-fast lasers inscribed micro-information has been demonstrated numerically and experimentally due to its multispectral reflection behaviour from the ultraviolet (UV) to the near-infrared (NIR) regions. The unique structural characteristics of silicon oxynitride-doped silicon were studied at the Si L, O K and N K edges using soft X-ray absorption studies. The quantum mechanical calculations provide the potential formation mechanism of SiON-doped Si, whereas the crystal structure prediction for bulk Si3N4-xOx was conducted using the particle swarm optimization method in combination with density functional theory (DFT).
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BibTeX
@misc{karatutlu2026design,
title = {{Design and synthesis of laser inscribed flexible Bragg gratings containing silicon oxynitride-doped silicon thin film for authentication applications with the insights from X-Ray Absorption Spectroscopy and Quantum Mechanical Calculations}},
author = {Ali Karatutlu and Timuçin Emre Tabaru and Umut Taylan and Zehra Gizem Mutlay and Doğukan Hazar Özbey and Okan Uslu and Hamid-Reza Bahari and Esra Kendir Tekgül and Andriy Budnyk and İremnur Duru and Mustafa Fatih Genisel and Zeynep Reyhan Öztürk and Taylan Gorkan and Engin Durgun and Bülend Ortaç},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.25382},
eprint = {2610.25382},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.25382},
}
RIS
TY - UNPB
TI - Design and synthesis of laser inscribed flexible Bragg gratings containing silicon oxynitride-doped silicon thin film for authentication applications with the insights from X-Ray Absorption Spectroscopy and Quantum Mechanical Calculations
AU - Ali Karatutlu
AU - Timuçin Emre Tabaru
AU - Umut Taylan
AU - Zehra Gizem Mutlay
AU - Doğukan Hazar Özbey
AU - Okan Uslu
AU - Hamid-Reza Bahari
AU - Esra Kendir Tekgül
AU - Andriy Budnyk
AU - İremnur Duru
AU - Mustafa Fatih Genisel
AU - Zeynep Reyhan Öztürk
AU - Taylan Gorkan
AU - Engin Durgun
AU - Bülend Ortaç
PY - 2026
DA - 2026/10/18
PB - arXiv
DO - 10.48550/arxiv.2610.25382
UR - https://arxiv.org/abs/2610.25382
AB - Silicon-on-insulator is mostly the main driving material system for the field of silicon photonics, including PICs, due to high index contrast and compatibility with current semiconductor manufacturing processes [1]. A recent example is silicon oxynitride-doped silicon [2] discovered recently by our group, offering to set a new position for the fields of silicon photonics with a precise control of refractive index from 2.1 to 2.5 together with the photosensitivity property at different wavelengths. In this study, we demonstrate that the synthesis of silicon oxynitride-doped silicon can be performed on a flexible substrate for the fabrication of Bragg gratings (BG) at low temperatures below 100 degrees Celsius that are emerging for advanced applications. Their use in preserving ultra-fast lasers inscribed micro-information has been demonstrated numerically and experimentally due to its multispectral reflection behaviour from the ultraviolet (UV) to the near-infrared (NIR) regions. The unique structural characteristics of silicon oxynitride-doped silicon were studied at the Si L, O K and N K edges using soft X-ray absorption studies. The quantum mechanical calculations provide the potential formation mechanism of SiON-doped Si, whereas the crystal structure prediction for bulk Si3N4-xOx was conducted using the particle swarm optimization method in combination with density functional theory (DFT).
ER -