Photoresponse properties of single-crystalline thick film based on high-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3
Abstract
High-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3 has been for the first time prepared by self-propagating high-temperature synthesis and melting methods. Single-crystalline thick-filmed sample with thickness of ~0.1 mm was applied to examine the photoresponse properties by using room-temperature chopped-light technique. Photodetector based on (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3 demonstrated strong photovoltaic response under irradiation of a white LED light, covering 420-730 nm range. The photocurrent increases from ~20 to ~55 mkA with the increase in intensity from 100 to 600 W/m2 that is originated from the increase in the number of non-equilibrium carriers generated by light. Room-temperature responsivity and detectivity of the photodetector are ~8.7 mA/W and ~109 Jones, respectively.
Versions
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BibTeX
@misc{vasilev2026photoresponse,
title = {{Photoresponse properties of single-crystalline thick film based on high-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3}},
author = {Alexei Vasilev and Marina Zhezhu and Oleg Ivanov},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.18771},
eprint = {2609.18771},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.18771},
}
RIS
TY - UNPB
TI - Photoresponse properties of single-crystalline thick film based on high-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3
AU - Alexei Vasilev
AU - Marina Zhezhu
AU - Oleg Ivanov
PY - 2026
DA - 2026/09/16
PB - arXiv
DO - 10.48550/arxiv.2609.18771
UR - https://arxiv.org/abs/2609.18771
AB - High-entropy topological insulator (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3 has been for the first time prepared by self-propagating high-temperature synthesis and melting methods. Single-crystalline thick-filmed sample with thickness of ~0.1 mm was applied to examine the photoresponse properties by using room-temperature chopped-light technique. Photodetector based on (Bi3/4Sb1/4)2(Te2/5Se2/5S1/5)3 demonstrated strong photovoltaic response under irradiation of a white LED light, covering 420-730 nm range. The photocurrent increases from ~20 to ~55 mkA with the increase in intensity from 100 to 600 W/m2 that is originated from the increase in the number of non-equilibrium carriers generated by light. Room-temperature responsivity and detectivity of the photodetector are ~8.7 mA/W and ~109 Jones, respectively.
ER -