Photoactive and Ultrastable Silicon/Boron Doped Diamond Photoanodes Enable Longstanding Photoinduced Electrochemiluminescence
Abstract
The lifetime of narrow bandgap photoanodes, employed in harsh photoelectrochemical energy conversion processes, relies on the protection layers that shield the semiconductor from severe oxidative degradation and passivation caused by the electrolyte. Here, we report ultrastable n -Si-based photoanodes, coated with boron-doped diamond (BDD) thin films, as an alternative to the transition metal-coated Si photoelectrodes employed so far for upconversion photoinduced electrochemiluminescence (ECL). Under near-infrared ( λ exc = 850 nm) excitation, the ( n -Si/BDD) heterojunction generates a stable 0.4 V photovoltage, driving efficient optical upconversion to visible photoinduced ECL (PECL) emission with both model ECL systems: luminol/H 2 O 2 (pH 13, λ PECL = 450 nm) and [Ru(bpy) 3 ] 2 + /TPrA (pH 7.4, λ PECL = 630 nm), both at remarkably low potentials. Benefiting from the structural integrity and chemical inertness of the BDD surface, the photoanode sustains continuous operation for more than 100 h in the neutral electrolyte with periodic renewal and can be regenerated after fouling in the alkaline environment. The n -Si/BDD photoanodes were demonstrated for localized PECL imaging of [Ru(bpy) 3 ] 2 + -functionalized magnetic microbeads as an immunoassay-relevant model system. This work establishes a chemically robust platform for reliable PECL imaging of luminophore-functionalized beads, highlighting its potential for future bead-based immunoassay applications and advanced clinical diagnostic technologies.
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BibTeX
@article{zhou2026photoactive,
title = {{Photoactive and Ultrastable Silicon/Boron Doped Diamond Photoanodes Enable Longstanding Photoinduced Electrochemiluminescence}},
author = {Changlin Zhou and Clément Briquet‐laugier and Bertrand Goudeau and Sirine Ben Khemis and Zonghua Wang and Emmanuel Scorsone and Gabriel Loget and Neso Sojic},
journal = {Advanced Optical Materials},
year = {2026},
month = oct,
doi = {10.1002/adom.71943},
url = {https://hal.science/hal-05845124v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Photoactive and Ultrastable Silicon/Boron Doped Diamond Photoanodes Enable Longstanding Photoinduced Electrochemiluminescence
AU - Changlin Zhou
AU - Clément Briquet‐laugier
AU - Bertrand Goudeau
AU - Sirine Ben Khemis
AU - Zonghua Wang
AU - Emmanuel Scorsone
AU - Gabriel Loget
AU - Neso Sojic
PY - 2026
DA - 2026/10/21
JO - Advanced Optical Materials
DO - 10.1002/adom.71943
UR - https://hal.science/hal-05845124v1
AB - The lifetime of narrow bandgap photoanodes, employed in harsh photoelectrochemical energy conversion processes, relies on the protection layers that shield the semiconductor from severe oxidative degradation and passivation caused by the electrolyte. Here, we report ultrastable n -Si-based photoanodes, coated with boron-doped diamond (BDD) thin films, as an alternative to the transition metal-coated Si photoelectrodes employed so far for upconversion photoinduced electrochemiluminescence (ECL). Under near-infrared ( λ exc = 850 nm) excitation, the ( n -Si/BDD) heterojunction generates a stable 0.4 V photovoltage, driving efficient optical upconversion to visible photoinduced ECL (PECL) emission with both model ECL systems: luminol/H 2 O 2 (pH 13, λ PECL = 450 nm) and [Ru(bpy) 3 ] 2 + /TPrA (pH 7.4, λ PECL = 630 nm), both at remarkably low potentials. Benefiting from the structural integrity and chemical inertness of the BDD surface, the photoanode sustains continuous operation for more than 100 h in the neutral electrolyte with periodic renewal and can be regenerated after fouling in the alkaline environment. The n -Si/BDD photoanodes were demonstrated for localized PECL imaging of [Ru(bpy) 3 ] 2 + -functionalized magnetic microbeads as an immunoassay-relevant model system. This work establishes a chemically robust platform for reliable PECL imaging of luminophore-functionalized beads, highlighting its potential for future bead-based immunoassay applications and advanced clinical diagnostic technologies.
SN - 2195-1071
ER -