InAsSb surface quantum well with in situ deposited Nb as a platform for hybrid devices
Abstract
Semiconductor-superconductor hybrid materials form the basis of quantum devices ranging from gate-tunable qubit platforms to topological quantum applications. These applications require material combinations that offer strong spin-orbit coupling and a large superconducting gap. Here, we present a semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown Indium Arsenide Antimonide surface quantum well with an in-situ deposited Niobium layer. The Indium Arsenide Antimonide surface quantum well offers a low effective mass and strong spin-orbit interaction, while Niobium has high critical temperature and large critical magnetic field. The in-situ deposition results in a high-quality interface, enabling strong coupling to the quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV. Furthermore, a planar asymmetric SQUID exhibits gate-tunable oscillations from both the junction and the SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for exploring gate-tunable superconductivity and topological superconducting devices.
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BibTeX
@article{telkamp2026inassb,
title = {{InAsSb surface quantum well with in situ deposited Nb as a platform for hybrid devices}},
author = {Sjoerd Telkamp and Zijin Lei and Tommaso Antonelli and Christian Reichl and Ilya Besedin and Georg Jakobs and Stefan Fält and Christian Marty and Rüdiger Schott and Werner Wegscheider},
journal = {Communications Physics},
year = {2026},
month = oct,
doi = {10.1038/s42005-026-02861-8},
url = {https://www.nature.com/articles/s42005-026-02861-8},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - InAsSb surface quantum well with in situ deposited Nb as a platform for hybrid devices
AU - Sjoerd Telkamp
AU - Zijin Lei
AU - Tommaso Antonelli
AU - Christian Reichl
AU - Ilya Besedin
AU - Georg Jakobs
AU - Stefan Fält
AU - Christian Marty
AU - Rüdiger Schott
AU - Werner Wegscheider
PY - 2026
DA - 2026/10/02
JO - Communications Physics
DO - 10.1038/s42005-026-02861-8
UR - https://www.nature.com/articles/s42005-026-02861-8
AB - Semiconductor-superconductor hybrid materials form the basis of quantum devices ranging from gate-tunable qubit platforms to topological quantum applications. These applications require material combinations that offer strong spin-orbit coupling and a large superconducting gap. Here, we present a semiconductor-superconductor hybrid material based on a molecular beam epitaxially grown Indium Arsenide Antimonide surface quantum well with an in-situ deposited Niobium layer. The Indium Arsenide Antimonide surface quantum well offers a low effective mass and strong spin-orbit interaction, while Niobium has high critical temperature and large critical magnetic field. The in-situ deposition results in a high-quality interface, enabling strong coupling to the quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV. Furthermore, a planar asymmetric SQUID exhibits gate-tunable oscillations from both the junction and the SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for exploring gate-tunable superconductivity and topological superconducting devices.
SN - 2399-3650
ER -