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PreprintCC BY 4.0arXiv

Controllable Quantum Spin Hall Phases in Bi2Te3-Family van der Waals Heterobilayers

  • Emmanuel V. C. Lopes
  • Pedro H. Sophia
  • Felipe Crasto de Lima
  • Adalberto Fazzio
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Abstract

The tunability and control of topological edge/surface states are crucial for the development of new device applications. In this work, by combining first-principles calculations and Wannier-based tight-binding methods, we show the emergence of quantum spin Hall phases in van der Waals heterostructures formed by stacking two trivial quintuple layers from the Bi2Te3 family. We demonstrate the tunability of the edge states under interlayer strain and external electric field effects, suggesting the possibility of switching topological edge states on/off by external control. Additionally, the quantum spin Hall edge channels remain robust against interlayer twist, highlighting their stability against external perturbations. Our results provide a new way to create and manipulate two-dimensional topological phases in systems based on Bi2Te3 family, which can be valuable for practical applications, such as topological field effect transistors and spintronic devices.

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Cite

BibTeXRIS
BibTeX
@misc{lopes2026controllable,
  title = {{Controllable Quantum Spin Hall Phases in Bi$_2$Te$_3$-Family van der Waals Heterobilayers}},
  author = {Emmanuel V. C. Lopes and Pedro H. Sophia and Felipe Crasto de Lima and Adalberto Fazzio},
  howpublished = {arXiv},
  year = {2026},
  month = jun,
  doi = {10.48550/arxiv.2606.20541},
  eprint = {2606.20541},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2606.20541},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Controllable Quantum Spin Hall Phases in Bi_2Te_3-Family van der Waals Heterobilayers
AU  - Emmanuel V. C. Lopes
AU  - Pedro H. Sophia
AU  - Felipe Crasto de Lima
AU  - Adalberto Fazzio
PY  - 2026
DA  - 2026/06/18
PB  - arXiv
DO  - 10.48550/arxiv.2606.20541
UR  - https://arxiv.org/abs/2606.20541
AB  - The tunability and control of topological edge/surface states are crucial for the development of new device applications. In this work, by combining first-principles calculations and Wannier-based tight-binding methods, we show the emergence of quantum spin Hall phases in van der Waals heterostructures formed by stacking two trivial quintuple layers from the Bi_2Te_3 family. We demonstrate the tunability of the edge states under interlayer strain and external electric field effects, suggesting the possibility of switching topological edge states on/off by external control. Additionally, the quantum spin Hall edge channels remain robust against interlayer twist, highlighting their stability against external perturbations. Our results provide a new way to create and manipulate two-dimensional topological phases in systems based on Bi_2Te_3 family, which can be valuable for practical applications, such as topological field effect transistors and spintronic devices.
ER  -