Excitonic Stark Response Induced by Quantum Capacitance in van der Waals Heterostructures
Abstract
Precise electrostatic control in van der Waals heterostructures is commonly described by a geometric capacitor model, which assumes that the internal electric field is fully determined by external gate voltages. Here, we show that this description breaks down in the presence of interfacial charge transfer, where quantum capacitance modifies the internal electrostatics. Using interlayer excitons as local probes, we observe a dipole-dependent energy splitting that persists even when the gate-induced geometric field is nominally canceled. This splitting reflects incomplete cancellation between gate- and carrier-induced fields set by quantum capacitance, while many-body renormalization is largely symmetric with respect to the two opposite dipole orientations, allowing the splitting to provide a direct optical measure of the local chemical potential. Our results reveal the central role of quantum capacitance in interface electrostatics and provide a route to probe it in operando.
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BibTeX
@misc{hong2026excitonic,
title = {{Excitonic Stark Response Induced by Quantum Capacitance in van der Waals Heterostructures}},
author = {Xiangzhi Hong and Yongkang Jian and Yang Chen and Rukai Cang and Yuanlong Guo and Takashi Taniguchi and Kenji Watanabe and Baigeng Wang and Erfu Liu},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.32532},
eprint = {2610.32532},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.32532},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Excitonic Stark Response Induced by Quantum Capacitance in van der Waals Heterostructures
AU - Xiangzhi Hong
AU - Yongkang Jian
AU - Yang Chen
AU - Rukai Cang
AU - Yuanlong Guo
AU - Takashi Taniguchi
AU - Kenji Watanabe
AU - Baigeng Wang
AU - Erfu Liu
PY - 2026
DA - 2026/10/23
PB - arXiv
DO - 10.48550/arxiv.2610.32532
UR - https://arxiv.org/abs/2610.32532
AB - Precise electrostatic control in van der Waals heterostructures is commonly described by a geometric capacitor model, which assumes that the internal electric field is fully determined by external gate voltages. Here, we show that this description breaks down in the presence of interfacial charge transfer, where quantum capacitance modifies the internal electrostatics. Using interlayer excitons as local probes, we observe a dipole-dependent energy splitting that persists even when the gate-induced geometric field is nominally canceled. This splitting reflects incomplete cancellation between gate- and carrier-induced fields set by quantum capacitance, while many-body renormalization is largely symmetric with respect to the two opposite dipole orientations, allowing the splitting to provide a direct optical measure of the local chemical potential. Our results reveal the central role of quantum capacitance in interface electrostatics and provide a route to probe it in operando.
ER -