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Peer-reviewedCC BYInnovation (Cambridge (Mass.))

Gradient-doped SnO2 for perovskite photovoltaics

  1. 1School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China
  2. 2Department of Mechanical and Materials Engineering, Universiti Tunku Abdul Rahman, Sungai Long Campus, Kajang 43000, Malaysia
  3. 3Institute of Flexible Electronics (IFE, Future Technologies), Future Display Institute of Xiamen, Tan Kah Kee Innovation Laboratory, Xiamen University, Xiamen 361102, China

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BibTeX
@article{qi2026gradientdoped,
  title = {{Gradient-doped SnO2 for perovskite photovoltaics}},
  author = {Jiahui Qi and Wenjie Yang and Hieng Kiat Jun and Zhong Chen and Guohua Xie and Jianghui Zheng},
  journal = {Innovation (Cambridge (Mass.))},
  year = {2026},
  month = aug,
  url = {https://europepmc.org/article/PMC/PMC13673532},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Gradient-doped SnO2 for perovskite photovoltaics
AU  - Jiahui Qi
AU  - Wenjie Yang
AU  - Hieng Kiat Jun
AU  - Zhong Chen
AU  - Guohua Xie
AU  - Jianghui Zheng
PY  - 2026
DA  - 2026/08/27
JO  - Innovation (Cambridge (Mass.))
UR  - https://europepmc.org/article/PMC/PMC13673532
SN  - 2666-6758
ER  -