Peer-reviewedCC BYInnovation (Cambridge (Mass.))
Gradient-doped SnO2 for perovskite photovoltaics
- 1School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China
- 2Department of Mechanical and Materials Engineering, Universiti Tunku Abdul Rahman, Sungai Long Campus, Kajang 43000, Malaysia
- 3Institute of Flexible Electronics (IFE, Future Technologies), Future Display Institute of Xiamen, Tan Kah Kee Innovation Laboratory, Xiamen University, Xiamen 361102, China
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BibTeX
@article{qi2026gradientdoped,
title = {{Gradient-doped SnO2 for perovskite photovoltaics}},
author = {Jiahui Qi and Wenjie Yang and Hieng Kiat Jun and Zhong Chen and Guohua Xie and Jianghui Zheng},
journal = {Innovation (Cambridge (Mass.))},
year = {2026},
month = aug,
url = {https://europepmc.org/article/PMC/PMC13673532},
note = {CC BY},
}
RIS
TY - JOUR
TI - Gradient-doped SnO2 for perovskite photovoltaics
AU - Jiahui Qi
AU - Wenjie Yang
AU - Hieng Kiat Jun
AU - Zhong Chen
AU - Guohua Xie
AU - Jianghui Zheng
PY - 2026
DA - 2026/08/27
JO - Innovation (Cambridge (Mass.))
UR - https://europepmc.org/article/PMC/PMC13673532
SN - 2666-6758
ER -