High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration
Abstract
The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still exhibit substantially inferior performance compared with their n-type counterparts. In this work, we demonstrate high-performance p-type SnOx transistors by atomic layer deposition (ALD), as back-end-of-line compatible devices for monolithic 3D integration. The SnOx transistors exhibit high field-effect mobility of 6.9 cm2/Vs, low subthreshold swing (SS) of 185 mV/dec, decent on/off ratio (ION/IOFF) of 1.8*104 and high bias stability. By scaling the channel length down to 80 nm, a high on-current of 38.7 mA/mm at VDS of -1 V is achieved. It is understood that precursor and reaction engineering to suppress Sn4+ component in SnOx film are the key for performance enhancement. Furthermore, a complementary field-effect transistor with ALD SnOx p-FET vertically stacking on ALD In2O3 n-FET is also demonstrated, achieving maximum voltage gain of 21 V/V at VDD of 4 V. These findings suggest ALD SnOx as a promising candidate for scaled high-performance BEOL p-type transistors.
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BibTeX
@misc{wang2026highperformance,
title = {{High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration}},
author = {Ziheng Wang and Wen He and Chen Gu and Kai Jiang and Liankai Zheng and Jinxiu Zhao and Zhiyu Lin and Xiangjun Liu and Di Geng and Ling Li and Mengwei Si},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.11114},
eprint = {2609.11114},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.11114},
}
RIS
TY - UNPB
TI - High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration
AU - Ziheng Wang
AU - Wen He
AU - Chen Gu
AU - Kai Jiang
AU - Liankai Zheng
AU - Jinxiu Zhao
AU - Zhiyu Lin
AU - Xiangjun Liu
AU - Di Geng
AU - Ling Li
AU - Mengwei Si
PY - 2026
DA - 2026/09/10
PB - arXiv
DO - 10.48550/arxiv.2609.11114
UR - https://arxiv.org/abs/2609.11114
AB - The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still exhibit substantially inferior performance compared with their n-type counterparts. In this work, we demonstrate high-performance p-type SnOx transistors by atomic layer deposition (ALD), as back-end-of-line compatible devices for monolithic 3D integration. The SnOx transistors exhibit high field-effect mobility of 6.9 cm2/Vs, low subthreshold swing (SS) of 185 mV/dec, decent on/off ratio (ION/IOFF) of 1.8*104 and high bias stability. By scaling the channel length down to 80 nm, a high on-current of 38.7 mA/mm at VDS of -1 V is achieved. It is understood that precursor and reaction engineering to suppress Sn4+ component in SnOx film are the key for performance enhancement. Furthermore, a complementary field-effect transistor with ALD SnOx p-FET vertically stacking on ALD In2O3 n-FET is also demonstrated, achieving maximum voltage gain of 21 V/V at VDD of 4 V. These findings suggest ALD SnOx as a promising candidate for scaled high-performance BEOL p-type transistors.
ER -