Ultrathin BiO x Charge-Transfer Doping for Cross-TMD Electronic Modulation and Homogeneous WSe2 Inverters
- 1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
- 2Graduate School of Advanced Technology, National Taiwan University, Taipei 106, Taiwan
Abstract
Charge-transfer doping provides a nondestructive route to tune two-dimensional transition-metal dichalcogenides (TMDs), but selectively patterned n-type dopants effective across different TMD channels remain limited. Here, ultrathin bismuth oxide (BiO x ) is used as an n-type charge-transfer doping and passivation layer for monolayer MoS2 and WSe2 transistors. In MoS2, 2 nm BiO x preserves the channel structure and yields a TLM-extracted effective contact resistance of 0.71 ± 0.06 kΩ·μm at n2D = 1.8 × 1013 cm–2. Thicker BiO x strengthens n-type modulation but reduces gate controllability. The modulation remains stable after ambient storage and air annealing. BiO x also enhances electron transport in WSe2 and enables homogeneous WSe2 inverters with MoO x -doped p-FETs, achieving a gain of ∼19 and a total normalized noise margin of 0.895 VDD at VDD = 2 V. These results establish BiO x as a cross-TMD n-type charge-transfer dopant for contact, threshold-voltage, and polarity engineering.
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BibTeX
@article{hsu2026ultrathin,
title = {{Ultrathin BiO x Charge-Transfer Doping for Cross-TMD Electronic Modulation and Homogeneous WSe2 Inverters}},
author = {Ching-Hao Hsu and Yu-Wei Hsu and Ta-Wei Hsu and Yu-Tung Lin and Li-Ya Chiu and I-Chih Ni and Chih-I Wu},
journal = {Nano Letters},
year = {2026},
month = oct,
doi = {10.1021/acs.nanolett.6c03585},
url = {https://doi.org/10.1021/acs.nanolett.6c03585},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Ultrathin BiO x Charge-Transfer Doping for Cross-TMD Electronic Modulation and Homogeneous WSe2 Inverters
AU - Ching-Hao Hsu
AU - Yu-Wei Hsu
AU - Ta-Wei Hsu
AU - Yu-Tung Lin
AU - Li-Ya Chiu
AU - I-Chih Ni
AU - Chih-I Wu
PY - 2026
DA - 2026/10/19
JO - Nano Letters
DO - 10.1021/acs.nanolett.6c03585
UR - https://doi.org/10.1021/acs.nanolett.6c03585
AB - Charge-transfer doping provides a nondestructive route to tune two-dimensional transition-metal dichalcogenides (TMDs), but selectively patterned n-type dopants effective across different TMD channels remain limited. Here, ultrathin bismuth oxide (BiO x ) is used as an n-type charge-transfer doping and passivation layer for monolayer MoS2 and WSe2 transistors. In MoS2, 2 nm BiO x preserves the channel structure and yields a TLM-extracted effective contact resistance of 0.71 ± 0.06 kΩ·μm at n2D = 1.8 × 1013 cm–2. Thicker BiO x strengthens n-type modulation but reduces gate controllability. The modulation remains stable after ambient storage and air annealing. BiO x also enhances electron transport in WSe2 and enables homogeneous WSe2 inverters with MoO x -doped p-FETs, achieving a gain of ∼19 and a total normalized noise margin of 0.895 VDD at VDD = 2 V. These results establish BiO x as a cross-TMD n-type charge-transfer dopant for contact, threshold-voltage, and polarity engineering.
SN - 1530-6984
SN - 1530-6992
ER -