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PreprintCC BY-SA 4.0arXiv

f-2f self-referencing for silicon nitride photonics via a heterogeneously integrated lithium niobate layer

  • Weichen Fan
  • Bastian Ruhnke
  • Camiel Op de Beeck
  • Giulio Tavani
  • Anton Vasiliev
  • Franz Kärtner
  • Tobias Herr
Open at sourcePDFDOICite

Abstract

Heterogeneous integration combines complementary material properties in a single photonic platform. Here, we demonstrate on-chip f-2f self-referencing in a heterogeneously integrated Si3N4/LiNbO3 platform, in which supercontinuum generation in a Si3N4 waveguide and second-harmonic generation in a LiNbO3 layer are spatially separated and linked by adiabatic escalator couplers. Pumped by a 1560 nm mode-locked laser with 75 pJ on-chip pulse energy, we detect the carrier-envelope offset frequency with 30 dB signal-to-noise ratio in 300 kHz resolution bandwidth. A comparative measurement confirms that the second harmonic originates in the LiNbO3 layer and indicates opportunity for further improvements through periodic poling. These results establish heterogeneous Si3N4/LiNbO3 integration as a viable building block for self-referenced ultrafast pulse sources in low-loss Si3N4 photonics.

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Cite

BibTeXRIS
BibTeX
@misc{fan2026selfreferencing,
  title = {{$f$-2$f$ self-referencing for silicon nitride photonics via a heterogeneously integrated lithium niobate layer}},
  author = {Weichen Fan and Bastian Ruhnke and Camiel Op de Beeck and Giulio Tavani and Anton Vasiliev and Franz Kärtner and Tobias Herr},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2609.23328},
  eprint = {2609.23328},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.23328},
  note = {CC BY-SA 4.0},
}
RIS
TY  - UNPB
TI  - f-2f self-referencing for silicon nitride photonics via a heterogeneously integrated lithium niobate layer
AU  - Weichen Fan
AU  - Bastian Ruhnke
AU  - Camiel Op de Beeck
AU  - Giulio Tavani
AU  - Anton Vasiliev
AU  - Franz Kärtner
AU  - Tobias Herr
PY  - 2026
DA  - 2026/10/17
PB  - arXiv
DO  - 10.48550/arxiv.2609.23328
UR  - https://arxiv.org/abs/2609.23328
AB  - Heterogeneous integration combines complementary material properties in a single photonic platform. Here, we demonstrate on-chip f-2f self-referencing in a heterogeneously integrated Si_3N_4/LiNbO_3 platform, in which supercontinuum generation in a Si_3N_4 waveguide and second-harmonic generation in a LiNbO_3 layer are spatially separated and linked by adiabatic escalator couplers. Pumped by a 1560 nm mode-locked laser with 75 pJ on-chip pulse energy, we detect the carrier-envelope offset frequency with 30 dB signal-to-noise ratio in 300 kHz resolution bandwidth. A comparative measurement confirms that the second harmonic originates in the LiNbO_3 layer and indicates opportunity for further improvements through periodic poling. These results establish heterogeneous Si_3N_4/LiNbO_3 integration as a viable building block for self-referenced ultrafast pulse sources in low-loss Si_3N_4 photonics.
ER  -