PIN-PMN-PT Surface Planar Waveguides Realized via He⁺ Implantation.
- 1Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic Information Xi'an Jiaotong University Xi'an China.
Abstract
Owing to their outstanding electro-optic (EO) coefficients, relaxor ferroelectric crystals are promising candidates for next-generation integrated optoelectronic devices, particularly high-performance EO modulators. However, the realization of high-performance EO modulators relies on high-quality optical waveguides, which remains a critical challenge for relaxor ferroelectric crystals. Here, we report the fabrication of a planar waveguide in surface layer of the Pb(In1/2Nb2/3)O₃-Pb(Mg1/2Nb2/3)O₃-PbTiO₃ (PIN-PMN-PT) relaxor ferroelectric single crystal using the He⁺ ion implantation technique. He⁺ implantation generates a subsurface damaged layer confined hundreds of nanometers below the crystal surface within the submicron range, whereas the overlying near-surface region retains a pristine single-crystal lattice. Moreover, the energy range of He ion implantation is 100-380 keV, and the damaged layer exhibits a reduced refractive index (maximum Δn ≈ 2.8%), which supports well-defined waveguide modes in the surface crystalline layer, as proved in the prism coupling measurement. The reconstructed refractive index profiles of the He⁺-implanted waveguide exhibit a characteristic optical barrier structure. This work not only clarifies the effects of He⁺ ion implantation on the structural properties of the PIN-PMN-PT single crystal but also provides an effective strategy for fabricating surface planar optical waveguides, thereby addressing a critical bottleneck for the application in integrated EO modulators.
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BibTeX
@article{zhang2026pinpmnpt,
title = {{PIN-PMN-PT Surface Planar Waveguides Realized via He⁺ Implantation.}},
author = {Binbin Zhang and Qingyuan Hu and Xin Liu and Yongyong Zhuang and Yuebin Zhang and Wentao Yang and Wenxu Huang and Zhuo Xu and Xiaoyong Wei},
journal = {Nanophotonics (Berlin, Germany)},
year = {2026},
month = nov,
doi = {10.1002/nap2.70349},
url = {https://europepmc.org/article/MED/42968989},
note = {CC BY},
}
RIS
TY - JOUR
TI - PIN-PMN-PT Surface Planar Waveguides Realized via He⁺ Implantation.
AU - Binbin Zhang
AU - Qingyuan Hu
AU - Xin Liu
AU - Yongyong Zhuang
AU - Yuebin Zhang
AU - Wentao Yang
AU - Wenxu Huang
AU - Zhuo Xu
AU - Xiaoyong Wei
PY - 2026
DA - 2026/11/01
JO - Nanophotonics (Berlin, Germany)
DO - 10.1002/nap2.70349
UR - https://europepmc.org/article/MED/42968989
AB - Owing to their outstanding electro-optic (EO) coefficients, relaxor ferroelectric crystals are promising candidates for next-generation integrated optoelectronic devices, particularly high-performance EO modulators. However, the realization of high-performance EO modulators relies on high-quality optical waveguides, which remains a critical challenge for relaxor ferroelectric crystals. Here, we report the fabrication of a planar waveguide in surface layer of the Pb(In1/2Nb2/3)O₃-Pb(Mg1/2Nb2/3)O₃-PbTiO₃ (PIN-PMN-PT) relaxor ferroelectric single crystal using the He⁺ ion implantation technique. He⁺ implantation generates a subsurface damaged layer confined hundreds of nanometers below the crystal surface within the submicron range, whereas the overlying near-surface region retains a pristine single-crystal lattice. Moreover, the energy range of He ion implantation is 100-380 keV, and the damaged layer exhibits a reduced refractive index (maximum Δn ≈ 2.8%), which supports well-defined waveguide modes in the surface crystalline layer, as proved in the prism coupling measurement. The reconstructed refractive index profiles of the He⁺-implanted waveguide exhibit a characteristic optical barrier structure. This work not only clarifies the effects of He⁺ ion implantation on the structural properties of the PIN-PMN-PT single crystal but also provides an effective strategy for fabricating surface planar optical waveguides, thereby addressing a critical bottleneck for the application in integrated EO modulators.
SN - 2192-8606
SN - 2192-8614
ER -