Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC
Abstract
We report on the development of 3D silicon sensors at the University of Science and Technology of China (USTC). The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+ electrodes pass through the epitaxial wafer, whereas the n+ electrodes stop at a short distance from the opposite side of the epitaxial wafer. Based on the current processing capacity, the sensors feature an ultra-thin active substrate (50 um) and a small pixel size of 50 um x 50 um or 25 um x 25 um. This R&D project aims to establish a sensor technology to simultaneously measure position and time information at the single-pixel level. The first fabrication run, using a merged layout containing both pixel sizes, has been completed. The design and fabrication of the sensors, followed by their characterization, including Current-Voltage (I-V) measurements and Sr-90 beta source measurements, are reported in this paper.
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BibTeX
@misc{ma2026development,
title = {{Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC}},
author = {Kuo Ma and De Zhang and Shengjia He and Tian-ao Wang and Han Li and Yu Nie and Xiuxia Wang and Jinlan Peng and Zheng Liang and Xiang Li and Wenhua Shi and Manwen Liu and Chuan Liao and Zheng Li and Zebo Tang and Yanwen Liu},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2605.13281},
eprint = {2605.13281},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2605.13281},
note = {CC BY-SA 4.0},
}
RIS
TY - UNPB
TI - Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC
AU - Kuo Ma
AU - De Zhang
AU - Shengjia He
AU - Tian-ao Wang
AU - Han Li
AU - Yu Nie
AU - Xiuxia Wang
AU - Jinlan Peng
AU - Zheng Liang
AU - Xiang Li
AU - Wenhua Shi
AU - Manwen Liu
AU - Chuan Liao
AU - Zheng Li
AU - Zebo Tang
AU - Yanwen Liu
PY - 2026
DA - 2026/10/02
PB - arXiv
DO - 10.48550/arxiv.2605.13281
UR - https://arxiv.org/abs/2605.13281
AB - We report on the development of 3D silicon sensors at the University of Science and Technology of China (USTC). The sensor involves columnar electrodes (5 um in diameter) of both doping types, etched from the same wafer side. The p+ electrodes pass through the epitaxial wafer, whereas the n+ electrodes stop at a short distance from the opposite side of the epitaxial wafer. Based on the current processing capacity, the sensors feature an ultra-thin active substrate (50 um) and a small pixel size of 50 um x 50 um or 25 um x 25 um. This R&D project aims to establish a sensor technology to simultaneously measure position and time information at the single-pixel level. The first fabrication run, using a merged layout containing both pixel sizes, has been completed. The design and fabrication of the sensors, followed by their characterization, including Current-Voltage (I-V) measurements and Sr-90 beta source measurements, are reported in this paper.
ER -