PreprintCC BY 4.0arXiv
Epitaxial growth of WO3 on r-plane sapphire by hot-filament metal-oxide deposition using CO2 as a precursor
Abstract
The deposition of epitaxial films of WO3 by hot-filament metal-oxide deposition using CO2 as a precursor was demonstrated. The films were obtained at a low growth rate of 0.25 nm/min. The optical properties of the film were assessed by variable-angle spectroscopic ellipsometry, indicating transparency across the visible spectrum and high absorption above 3 eV.
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BibTeX
@misc{souqui2026epitaxial,
title = {{Epitaxial growth of WO3 on r-plane sapphire by hot-filament metal-oxide deposition using CO2 as a precursor}},
author = {Laurent Souqui and Lewis J. Adams and Andreas Tsampanakis and David Rehnlund Maibach and Per Eklund},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.11654},
eprint = {2610.11654},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.11654},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Epitaxial growth of WO3 on r-plane sapphire by hot-filament metal-oxide deposition using CO2 as a precursor
AU - Laurent Souqui
AU - Lewis J. Adams
AU - Andreas Tsampanakis
AU - David Rehnlund Maibach
AU - Per Eklund
PY - 2026
DA - 2026/10/08
PB - arXiv
DO - 10.48550/arxiv.2610.11654
UR - https://arxiv.org/abs/2610.11654
AB - The deposition of epitaxial films of WO3 by hot-filament metal-oxide deposition using CO2 as a precursor was demonstrated. The films were obtained at a low growth rate of 0.25 nm/min. The optical properties of the film were assessed by variable-angle spectroscopic ellipsometry, indicating transparency across the visible spectrum and high absorption above 3 eV.
ER -