Robust Anomalous Hall Effect in Epitaxial Cubic D03-Fe3Ge Nanoplates Grown by Chemical Vapor Deposition
Abstract
The iron-based ferromagnetic materials have emerged as a promising system for spintronics due to their high Curie temperatures and significant anomalous Hall effect (AHE) driven by Berry curvature. While there have been investigations into the epitaxial growth of non-layered iron-based ferromagnetic materials, the realization of high-quality single crystal thin films continues to be a formidable obstacle. Meanwhile, the issues such as grain boundary scattering further hinder their characterization and application. Here, we report the first chemical vapor deposition (CVD) synthesis of single-crystalline cubic D03-Fe3Ge nanoplates. This compound represents a substantial departure from the conventional hexagonal phases typically observed in the Fe-Ge system. Structural characterizations confirm the cubic lattice and stoichiometric purity of the crystals. Structural analysis identifies a strong epitaxial effect, resulting in a giant compressive strain of ~4.16% at the interface that relaxes gradually toward the surface. The second-harmonic generation (SHG) signals might further reveal that such interfacial strain disrupted the inherent centro-symmetry of the cubic phase. SQUID magnetometry shows robust room-temperature ferromagnetism and clear magnetic anisotropy. Magneto-transport measurements reveal a robust AHE that remains stable at temperatures far exceeding room temperature. The scaling observed between the anomalous Hall resistance and longitudinal resistance strongly suggests that this effect is dominated by the intrinsic Berry curvature mechanism. Furthermore, density functional theory (DFT) calculations reveal that the huge epitaxial strain induces band reconstructions and creates dense spin-orbit coupling gaps near the Fermi level, effectively doubling the anomalous Hall conductivity to match our experimental observations.
Versions
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BibTeX
@misc{chen2026robust,
title = {{Robust Anomalous Hall Effect in Epitaxial Cubic D0$_3$-Fe$_3$Ge Nanoplates Grown by Chemical Vapor Deposition}},
author = {Mingxuan Chen and Chao Chen and Siqi Jiang and Shuxiang Qiao and Hongyan Lu and Di Zhang and Jiabei Huang and Fuzhuo Lian and Zhaochen Qu and Siqin Wang and Ziyi Wang and Shuai Zhang and Yulu Liu and Ronghua Liu and Xiaoxiang Xi and Renjun Du and Lei Wang and Geliang Yu},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.29858},
eprint = {2610.29858},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.29858},
}
RIS
TY - UNPB
TI - Robust Anomalous Hall Effect in Epitaxial Cubic D0_3-Fe_3Ge Nanoplates Grown by Chemical Vapor Deposition
AU - Mingxuan Chen
AU - Chao Chen
AU - Siqi Jiang
AU - Shuxiang Qiao
AU - Hongyan Lu
AU - Di Zhang
AU - Jiabei Huang
AU - Fuzhuo Lian
AU - Zhaochen Qu
AU - Siqin Wang
AU - Ziyi Wang
AU - Shuai Zhang
AU - Yulu Liu
AU - Ronghua Liu
AU - Xiaoxiang Xi
AU - Renjun Du
AU - Lei Wang
AU - Geliang Yu
PY - 2026
DA - 2026/10/21
PB - arXiv
DO - 10.48550/arxiv.2610.29858
UR - https://arxiv.org/abs/2610.29858
AB - The iron-based ferromagnetic materials have emerged as a promising system for spintronics due to their high Curie temperatures and significant anomalous Hall effect (AHE) driven by Berry curvature. While there have been investigations into the epitaxial growth of non-layered iron-based ferromagnetic materials, the realization of high-quality single crystal thin films continues to be a formidable obstacle. Meanwhile, the issues such as grain boundary scattering further hinder their characterization and application. Here, we report the first chemical vapor deposition (CVD) synthesis of single-crystalline cubic D0_3-Fe_3Ge nanoplates. This compound represents a substantial departure from the conventional hexagonal phases typically observed in the Fe-Ge system. Structural characterizations confirm the cubic lattice and stoichiometric purity of the crystals. Structural analysis identifies a strong epitaxial effect, resulting in a giant compressive strain of ~4.16% at the interface that relaxes gradually toward the surface. The second-harmonic generation (SHG) signals might further reveal that such interfacial strain disrupted the inherent centro-symmetry of the cubic phase. SQUID magnetometry shows robust room-temperature ferromagnetism and clear magnetic anisotropy. Magneto-transport measurements reveal a robust AHE that remains stable at temperatures far exceeding room temperature. The scaling observed between the anomalous Hall resistance and longitudinal resistance strongly suggests that this effect is dominated by the intrinsic Berry curvature mechanism. Furthermore, density functional theory (DFT) calculations reveal that the huge epitaxial strain induces band reconstructions and creates dense spin-orbit coupling gaps near the Fermi level, effectively doubling the anomalous Hall conductivity to match our experimental observations.
ER -