Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions
Abstract
HfO2-based ferroelectric tunnel junctions (FTJs) are promising candidates for scalable non-volatile memory, but simultaneously achieving a high tunneling electro-resistance ratio (TER) and a low resistance-area (RA) product remains challenging. To address this challenge, this work introduces non-uniform quantum well (QW) and barrier thickness engineering in HfO2-based multi-QW FTJs using a self-consistent Preisach-based ferroelectric (FE) model integrated with the coherent and inelastic non-equilibrium Green's function (NEGF) formalism. The non-uniform well and barrier configuration produces a wide range of FTJ design landscapes due to closely spaced, broad resonant states in the low resistance state (LRS) and a larger separation in the high resistance state (HRS), resulting in strong polarization-dependent resonant transmission with TER reaching the order of 1×108% and an LRS RA product as low as 1 Ω·cm2 at read bias and in the presence of scattering. By incorporating self-consistent elastic scattering into the NEGF framework, we also show that elastic scattering can positively influence the TER and RA performance of non-uniform FTJs by progressively increasing the overlap of the closely spaced resonances. Overall, the results establish non-uniform QW and barrier thickness as an effective and robust design parameter for controlling resonant-state alignment and achieving a favorable combination of high TER and low RA in HfO2-based multi-QW FTJs.
Related
- Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature
- Orientation engineering is a universal strategy for ferroelectric trans-switching
- Engineering Grain Boundary Commensurability for Ferroelectric Stabilization in Hafnia-Based Films
- Engineering Ferroelectric Phases in BaTiO3 Films via Buffer-Layer Induced Misfit Strain Reversal
- Quantum Batteries in two-dimensional material-based Josephson Junctions
BibTeX
@misc{khattar2026nonuniform,
title = {{Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions}},
author = {Balram Khattar and Adarsh Tripathi and Manish Anand and Abhishek Sharma},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.31411},
eprint = {2609.31411},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.31411},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions
AU - Balram Khattar
AU - Adarsh Tripathi
AU - Manish Anand
AU - Abhishek Sharma
PY - 2026
DA - 2026/09/25
PB - arXiv
DO - 10.48550/arxiv.2609.31411
UR - https://arxiv.org/abs/2609.31411
AB - HfO_2-based ferroelectric tunnel junctions (FTJs) are promising candidates for scalable non-volatile memory, but simultaneously achieving a high tunneling electro-resistance ratio (TER) and a low resistance-area (RA) product remains challenging. To address this challenge, this work introduces non-uniform quantum well (QW) and barrier thickness engineering in HfO_2-based multi-QW FTJs using a self-consistent Preisach-based ferroelectric (FE) model integrated with the coherent and inelastic non-equilibrium Green's function (NEGF) formalism. The non-uniform well and barrier configuration produces a wide range of FTJ design landscapes due to closely spaced, broad resonant states in the low resistance state (LRS) and a larger separation in the high resistance state (HRS), resulting in strong polarization-dependent resonant transmission with TER reaching the order of 1×10^8% and an LRS RA product as low as 1 Ω·cm^2 at read bias and in the presence of scattering. By incorporating self-consistent elastic scattering into the NEGF framework, we also show that elastic scattering can positively influence the TER and RA performance of non-uniform FTJs by progressively increasing the overlap of the closely spaced resonances. Overall, the results establish non-uniform QW and barrier thickness as an effective and robust design parameter for controlling resonant-state alignment and achieving a favorable combination of high TER and low RA in HfO_2-based multi-QW FTJs.
ER -