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PreprintCC BY 4.0arXiv

Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature

Abstract

Ambient-temperature coexistence of ferroelectricity, photoconductivity, and ionic transport in ultra-thin van der Waals (vdW) compound CuCrP2S6 (CCPS) offers significant potential for multifunctional electronic, photonic, and neuromorphic applications. However, ferroelectricity and ionic transport can become antagonistic when sharing a common atomic origin, like the copper ions in CCPS. We address this fundamental dichotomy by systematically investigating the thickness-dependent evolution of ferroelectricity, ionic migration, and memristive behavior in CCPS diodes via electrostatic and photo-assisted interfacial band tuning. Using piezoresponse, Kelvin probe, and conductive atomic force microscopy, alongside photoexcited transport measurements, we identify distinct thickness regimes. CCPS flakes thinner than ~ 40 nm exhibit robust, reversible ferroelectric (FE) switching. Conversely, thicker samples display suppressed switchable polarization, with electrical conduction dominated by Cu+ migration, filamentary memristive switching, and rectification reversal. Optical illumination further enhances ionic mobility via photogenerated carriers, driving photo-assisted ionic transport in non-FE flakes and a coupled photoferroionic response in FE flakes. These findings clarify how ferroelectricity fundamentally alters ionic transport dynamics in vdW ferroionic systems.

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BibTeX
@misc{chatterjee2026thicknesscontrolled,
  title = {{Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature}},
  author = {Subhashree Chatterjee and Abhishek Bajgain and Rabindra Basnet and Ramesh C. Budhani},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.02380},
  eprint = {2610.02380},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.02380},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature
AU  - Subhashree Chatterjee
AU  - Abhishek Bajgain
AU  - Rabindra Basnet
AU  - Ramesh C. Budhani
PY  - 2026
DA  - 2026/10/01
PB  - arXiv
DO  - 10.48550/arxiv.2610.02380
UR  - https://arxiv.org/abs/2610.02380
AB  - Ambient-temperature coexistence of ferroelectricity, photoconductivity, and ionic transport in ultra-thin van der Waals (vdW) compound CuCrP2S6 (CCPS) offers significant potential for multifunctional electronic, photonic, and neuromorphic applications. However, ferroelectricity and ionic transport can become antagonistic when sharing a common atomic origin, like the copper ions in CCPS. We address this fundamental dichotomy by systematically investigating the thickness-dependent evolution of ferroelectricity, ionic migration, and memristive behavior in CCPS diodes via electrostatic and photo-assisted interfacial band tuning. Using piezoresponse, Kelvin probe, and conductive atomic force microscopy, alongside photoexcited transport measurements, we identify distinct thickness regimes. CCPS flakes thinner than ~ 40 nm exhibit robust, reversible ferroelectric (FE) switching. Conversely, thicker samples display suppressed switchable polarization, with electrical conduction dominated by Cu+ migration, filamentary memristive switching, and rectification reversal. Optical illumination further enhances ionic mobility via photogenerated carriers, driving photo-assisted ionic transport in non-FE flakes and a coupled photoferroionic response in FE flakes. These findings clarify how ferroelectricity fundamentally alters ionic transport dynamics in vdW ferroionic systems.
ER  -