Morphological and structural engineering of niobium selenide nanostructures via chemical vapor transport
Abstract
We demonstrate a method for engineering niobium selenide (Nb-Se) nanostructures by systematically adjusting the growth parameters in a bottom-up chemical vapor transport (CVT) process, and study their influence on the feature of the resulting products, such as composition, morphology and phase. Thermodynamic calculations were performed to optimize the growth process. Using either, I2 or NbCl5 as transport agent resulted in the formation of high quality NbSe2 nanocrystals or Nb2Se9 nanowires respectively. Different growth temperatures lead to formation of NbSe2 at (T1 = 1000 ◦C, T2 = 800 ◦C) and (NbSe4)3I at (T1 = 600 ◦C, T2 = 400 ◦C). This study explored also the effect of the amount of transport agent as well as the nature and the pre-growth thermal oxidation duration of the substrates on the morphology, the growth mode and the distribution of the deposited crystals over the substrates. The chemical composition and morphology of the nanocrystals were analyzed by energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The high crystalline quality was confirmed by high-resolution transmission electron microscopy. Charge transport measurements of metallic NbSe2 nanostructures revealed a small excess resistance below 6.5 K, attributed to inhomogeneous superconductivity, due to either local charge puddles or to quantum fluctuations in highly-crystalline 2D superconductors. Nb2Se9 nanowires were found insulating.
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BibTeX
@article{abdelrahman2026morphological,
title = {{Morphological and structural engineering of niobium selenide nanostructures via chemical vapor transport}},
author = {Nour Abdelrahman and Daniel Wolf and Alexey Popov and Sandra Schiemenz and Romain Giraud and Ammar Soliman and Joseph Dufouleur and Samuel Froeschke and Bernd Büchner and Michael Mertig and Silke Hampel},
journal = {Materials Today Nano},
year = {2026},
month = oct,
doi = {10.1016/j.mtnano.2026.100966},
url = {https://hal.science/hal-05857216v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Morphological and structural engineering of niobium selenide nanostructures via chemical vapor transport
AU - Nour Abdelrahman
AU - Daniel Wolf
AU - Alexey Popov
AU - Sandra Schiemenz
AU - Romain Giraud
AU - Ammar Soliman
AU - Joseph Dufouleur
AU - Samuel Froeschke
AU - Bernd Büchner
AU - Michael Mertig
AU - Silke Hampel
PY - 2026
DA - 2026/10/01
JO - Materials Today Nano
DO - 10.1016/j.mtnano.2026.100966
UR - https://hal.science/hal-05857216v1
AB - We demonstrate a method for engineering niobium selenide (Nb-Se) nanostructures by systematically adjusting the growth parameters in a bottom-up chemical vapor transport (CVT) process, and study their influence on the feature of the resulting products, such as composition, morphology and phase. Thermodynamic calculations were performed to optimize the growth process. Using either, I2 or NbCl5 as transport agent resulted in the formation of high quality NbSe2 nanocrystals or Nb2Se9 nanowires respectively. Different growth temperatures lead to formation of NbSe2 at (T1 = 1000 ◦C, T2 = 800 ◦C) and (NbSe4)3I at (T1 = 600 ◦C, T2 = 400 ◦C). This study explored also the effect of the amount of transport agent as well as the nature and the pre-growth thermal oxidation duration of the substrates on the morphology, the growth mode and the distribution of the deposited crystals over the substrates. The chemical composition and morphology of the nanocrystals were analyzed by energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The high crystalline quality was confirmed by high-resolution transmission electron microscopy. Charge transport measurements of metallic NbSe2 nanostructures revealed a small excess resistance below 6.5 K, attributed to inhomogeneous superconductivity, due to either local charge puddles or to quantum fluctuations in highly-crystalline 2D superconductors. Nb2Se9 nanowires were found insulating.
SN - 2588-8420
ER -