Propagating edge and interfacial states in corrugated graphene: Robustness and configurability
Abstract
Periodically strained graphene provides a versatile platform to realize moiré-like electronic structures. We show that the interplay between strain-induced pseudomagnetic field and a displacement-field-controlled scalar potential enables the formation of isolated narrow bands. Some of the low-energy bands are topological, carrying valley-opposite Chern numbers. Remarkably, despite a vanishing total Chern number, propagating in-gap edge states emerge in various nanoribbon geometries that preserve valley symmetry. We elucidate the distinct mechanisms responsible for edge states in the zero-energy and higher-energy gaps and demonstrate their robustness against disorders, despite lacking conventional topological protection. Leveraging these properties, we propose device architectures in which a displacement field switches the zero-energy gap and its associated edge channels on and off. Furthermore, split-gate geometries generate topological interfacial states that coexist with the edge modes and can be spatially reconfigured. These results establish strain superlattices as a powerful platform for engineering topological electronic states and electronic transport.
Versions
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BibTeX
@misc{belayadi2026propagating,
title = {{Propagating edge and interfacial states in corrugated graphene: Robustness and configurability}},
author = {Adel Belayadi and Dawei Zhai and Nancy Sandler},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2606.21065},
eprint = {2606.21065},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2606.21065},
}
RIS
TY - UNPB
TI - Propagating edge and interfacial states in corrugated graphene: Robustness and configurability
AU - Adel Belayadi
AU - Dawei Zhai
AU - Nancy Sandler
PY - 2026
DA - 2026/10/02
PB - arXiv
DO - 10.48550/arxiv.2606.21065
UR - https://arxiv.org/abs/2606.21065
AB - Periodically strained graphene provides a versatile platform to realize moiré-like electronic structures. We show that the interplay between strain-induced pseudomagnetic field and a displacement-field-controlled scalar potential enables the formation of isolated narrow bands. Some of the low-energy bands are topological, carrying valley-opposite Chern numbers. Remarkably, despite a vanishing total Chern number, propagating in-gap edge states emerge in various nanoribbon geometries that preserve valley symmetry. We elucidate the distinct mechanisms responsible for edge states in the zero-energy and higher-energy gaps and demonstrate their robustness against disorders, despite lacking conventional topological protection. Leveraging these properties, we propose device architectures in which a displacement field switches the zero-energy gap and its associated edge channels on and off. Furthermore, split-gate geometries generate topological interfacial states that coexist with the edge modes and can be spatially reconfigured. These results establish strain superlattices as a powerful platform for engineering topological electronic states and electronic transport.
ER -