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Peer-reviewedCC BYAdvanced Electronic Materials

Electron Transport in Quantum Dot Light‐Emitting Diodes

  • Shuxin Li1
  • Wenxin Lin1
  • Min Zheng1
  • Xiongfeng Lin2
  • Yulin Guo2
  • Longjia Wu2
  • Quan Niu1
  • Paul W. M. Blom3
  • Yuguang Ma1
  1. 1State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou Guangdong China
  2. 2TCL Corporate Research Shenzhen Guangdong China
  3. 3Max Planck Institute for Polymer Research Mainz Germany
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Abstract

Despite extensive research on quantum dot light‐emitting diodes, the underlying charge transport mechanisms remain poorly understood. Previously, we have demonstrated that the hole transport in quantum dot (QD) thin films is trap‐free and space‐charge‐limited. However, the electron transport mechanism remains unexplored. In this study, we systematically investigate the electron transport in red, green, and blue (RGB) core/multi‐shell QD thin films through the analysis of the current density‐voltage (J–V) measurements using single‐carrier devices. Our findings reveal that the electron transport in these QD thin films is significantly impeded by the presence of electron traps, which exhibit a Gaussian energy distribution within the bandgap. Notably, the electron trap distributions observed across different QD systems exhibit a high degree of similarity. Specifically, these traps have a concentration of ∼1 × 1023 m−3, with the trap center energy level positioned at approximately 4.0 eV below the vacuum level. Furthermore, the width of the energy distribution of the trapping sites is comparable to that of the QD transport sites. By correlating the surface‐to‐volume ratio with the number of traps, we propose that the traps are located at the core‐shell interface and arise from uncoordinated atoms. Therefore, increasing the core size can effectively suppress the trapping effect.

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Cite

BibTeXRIS
BibTeX
@article{li2026electron,
  title = {{Electron Transport in Quantum Dot Light‐Emitting Diodes}},
  author = {Shuxin Li and Wenxin Lin and Min Zheng and Xiongfeng Lin and Yulin Guo and Longjia Wu and Quan Niu and Paul W. M. Blom and Yuguang Ma},
  journal = {Advanced Electronic Materials},
  year = {2026},
  month = oct,
  doi = {10.1002/aelm.70546},
  url = {https://doi.org/10.1002/aelm.70546},
  note = {CC BY},
}
RIS
TY  - JOUR
TI  - Electron Transport in Quantum Dot Light‐Emitting Diodes
AU  - Shuxin Li
AU  - Wenxin Lin
AU  - Min Zheng
AU  - Xiongfeng Lin
AU  - Yulin Guo
AU  - Longjia Wu
AU  - Quan Niu
AU  - Paul W. M. Blom
AU  - Yuguang Ma
PY  - 2026
DA  - 2026/10/26
JO  - Advanced Electronic Materials
DO  - 10.1002/aelm.70546
UR  - https://doi.org/10.1002/aelm.70546
AB  - Despite extensive research on quantum dot light‐emitting diodes, the underlying charge transport mechanisms remain poorly understood. Previously, we have demonstrated that the hole transport in quantum dot (QD) thin films is trap‐free and space‐charge‐limited. However, the electron transport mechanism remains unexplored. In this study, we systematically investigate the electron transport in red, green, and blue (RGB) core/multi‐shell QD thin films through the analysis of the current density‐voltage (J–V) measurements using single‐carrier devices. Our findings reveal that the electron transport in these QD thin films is significantly impeded by the presence of electron traps, which exhibit a Gaussian energy distribution within the bandgap. Notably, the electron trap distributions observed across different QD systems exhibit a high degree of similarity. Specifically, these traps have a concentration of ∼1 × 1023 m−3, with the trap center energy level positioned at approximately 4.0 eV below the vacuum level. Furthermore, the width of the energy distribution of the trapping sites is comparable to that of the QD transport sites. By correlating the surface‐to‐volume ratio with the number of traps, we propose that the traps are located at the core‐shell interface and arise from uncoordinated atoms. Therefore, increasing the core size can effectively suppress the trapping effect.
SN  - 2199-160X
ER  -