Recent Strategies in Electron Transport Layers Based on Metal Oxide Nanoparticles for Quantum Dot Light Emitting Diodes
- 1Department of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of Korea
Abstract
Quantum dot light emitting diodes (QLEDs) have attracted considerable attention as next-generation display devices because of their high color purity, wide color gamut, and high luminous efficiency. Their performance is governed not only by the quantum dot emissive layer but also by the electron transport layer (ETL), which controls electron injection and transport, hole blocking, and interfacial recombination. In particular, metal oxide nanoparticles are widely used as ETL materials because of their high electron mobility, favorable energy level alignment with quantum dots, and compatibility with low temperature solution processing. QLEDs with ETLs based on metal oxide nanoparticles, however, suffer from excessive electron injection and surface defects such as oxygen vacancies and hydroxyl groups, which allow charge to accumulate at the interface and quench excitons, causing efficiency roll-off and limiting operational stability. Here, we review strategies developed to address these limitations, categorized into materials engineering (doping and surface treatment) and device structure engineering (interlayer insertion and double-layer ETLs).
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BibTeX
@article{kim2026recent,
title = {{Recent Strategies in Electron Transport Layers Based on Metal Oxide Nanoparticles for Quantum Dot Light Emitting Diodes}},
author = {Hyeongseok Kim and Taewook Kang and Sanghyo Lee},
journal = {Inorganics},
year = {2026},
month = nov,
doi = {10.3390/inorganics14110283},
url = {https://www.mdpi.com/2304-6740/14/11/283},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Recent Strategies in Electron Transport Layers Based on Metal Oxide Nanoparticles for Quantum Dot Light Emitting Diodes
AU - Hyeongseok Kim
AU - Taewook Kang
AU - Sanghyo Lee
PY - 2026
DA - 2026/11/05
JO - Inorganics
DO - 10.3390/inorganics14110283
UR - https://www.mdpi.com/2304-6740/14/11/283
AB - Quantum dot light emitting diodes (QLEDs) have attracted considerable attention as next-generation display devices because of their high color purity, wide color gamut, and high luminous efficiency. Their performance is governed not only by the quantum dot emissive layer but also by the electron transport layer (ETL), which controls electron injection and transport, hole blocking, and interfacial recombination. In particular, metal oxide nanoparticles are widely used as ETL materials because of their high electron mobility, favorable energy level alignment with quantum dots, and compatibility with low temperature solution processing. QLEDs with ETLs based on metal oxide nanoparticles, however, suffer from excessive electron injection and surface defects such as oxygen vacancies and hydroxyl groups, which allow charge to accumulate at the interface and quench excitons, causing efficiency roll-off and limiting operational stability. Here, we review strategies developed to address these limitations, categorized into materials engineering (doping and surface treatment) and device structure engineering (interlayer insertion and double-layer ETLs).
SN - 2304-6740
ER -