PreprintCC BY 4.0arXiv
Electro-Thermal Origins of Enhanced Performance and Scalability in Disc-Type Phase-Change Memory
Abstract
Disc-type phase-change memory is a promising device architecture for analog in-memory computing, enabled by the unique physical properties of ultra-thin phase-change materials and the device geometry. In this study, we develop a comparative analytical framework using compact electro-thermal models to examine the state dependent readout and programming behavior of these devices. The framework provides insight into the fundamental physical mechanisms responsible for their enhanced functionality and highlights promising directions for further device optimization and performance improvement.
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BibTeX
@misc{syed2026electrothermal,
title = {{Electro-Thermal Origins of Enhanced Performance and Scalability in Disc-Type Phase-Change Memory}},
author = {Ghazi Sarwat Syed and Loris Coccia and Siddharth Gautam and Vara Prasad Jonnalagadda and Abu Sebastian},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.32654},
eprint = {2609.32654},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.32654},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Electro-Thermal Origins of Enhanced Performance and Scalability in Disc-Type Phase-Change Memory
AU - Ghazi Sarwat Syed
AU - Loris Coccia
AU - Siddharth Gautam
AU - Vara Prasad Jonnalagadda
AU - Abu Sebastian
PY - 2026
DA - 2026/09/26
PB - arXiv
DO - 10.48550/arxiv.2609.32654
UR - https://arxiv.org/abs/2609.32654
AB - Disc-type phase-change memory is a promising device architecture for analog in-memory computing, enabled by the unique physical properties of ultra-thin phase-change materials and the device geometry. In this study, we develop a comparative analytical framework using compact electro-thermal models to examine the state dependent readout and programming behavior of these devices. The framework provides insight into the fundamental physical mechanisms responsible for their enhanced functionality and highlights promising directions for further device optimization and performance improvement.
ER -